NDLI: 200 keV ion implantation experiments in very high dose region

Content Provider	IEEE Xplore Digital Library
Author	Ito, Y. Ishigami, R. Yasuda, K. Hatori, S. Yamamoto, A.
Copyright Year	2000
Description	Author affiliation: Wakasa-wan Energy Res. Center, Fukui, Japan (Ito, Y.)
Abstract	Nitrogen ions with an energy of 190 keV were implanted into the aluminum rich alloy (95% Al and 5% Mg) in the dose region from 2/spl times/10/sup 17/ to 2/spl times/10/sup 19/ ions/cm/sup 2/. The wurtzite type hcp AlN structure with a c-axis preferred orientation was formed. The nitrogen depth profile was Gaussian-like for low doses and the profile became trapezoidal with a flat-topped plateau almost equal to the stoichiometric ratio of AlN in the dose region more than 5/spl times/10/sup 17/ ions/cm/sup 2/. For very high doses more than 8/spl times/10/sup 18/ ions/cm/sup 2/, both the thickness of the AlN layer and the width /spl Delta/W of the nitrogen existence layer in front of AlN broadened as the dose increased. In case of dose 2/spl times/10/sup 19/ ions/cm/sup 2/, the thickness was 1.2 /spl mu/m and /spl Delta/W was 0.3 /spl mu/m.
Starting Page	793
Ending Page	796
File Size	372973
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924273
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion implantation Nitrogen Ion accelerators Proton accelerators Thermal conductivity Plasma temperature Aluminum alloys Materials science and technology Ion beams Microwave devices
Content Type	Text
Resource Type	Article

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