NDLI: The role of fluorine on reducing TED in boron implanted silicon

Content Provider	IEEE Xplore Digital Library
Author	Robertson, L.S. Warnes, P.N. Law, M.E. Jones, K.S. Downey, D.F. Liu, J.
Copyright Year	2000
Description	Author affiliation: SWAMP Center, Florida Univ., Gainesville, FL, USA (Robertson, L.S.)
Abstract	Recently, it was shown that fluorine limits the transient enhanced diffusion of the boron in the regrown silicon by a chemical species by implanting BF/sup 2+/ and B/sup +/ into pre-amorphized silicon. However, it remained unclear from these studies whether the fluorine was interacting with the boron or the excess silicon interstitials from the EOR damage. In order to answer this question, a series of experiments have been performed. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si/sup +/ implantation at a dose of 1/spl times/10/sup 15//cm/sup 2/ The Si/sup +/ implant produced a 1500 /spl Aring/ deep amorphous layer, which was then implanted with 1.12 keV 1/spl times/10/sup 15//cm/sup 2/ B/sup +/ The samples were then implanted with a dose of 2/spl times/10/sup 15//cm/sup 2/F/sup +/ at various energies ranging from 2 keV to 36 keV. By varying the F/sup +/ energy it was possible to change the position and concentration of the fluorine relative to the boron and the end-of-range interstitial source. After annealing at 750/spl deg/C and 1050/spl deg/C the wafers were analyzed by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM), and Hall effect. The results suggest the fluorine is reducing the TED of the boron by interacting with the boron more than the excess interstitials.
Starting Page	171
Ending Page	174
File Size	338016
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924117
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Boron Silicon Implants Rapid thermal annealing Chemicals Mass spectroscopy Transmission electron microscopy Amorphous materials Hall effect Ion implantation
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in