NDLI: Tailoring of the switching time of p-n junction diodes by inducing defects in the p-region with swift heavy ions

Content Provider	IEEE Xplore Digital Library
Author	Sathyavathi, P. Bhoraskar, V.N.
Copyright Year	2000
Description	Author affiliation: Dept. of Phys., Pune Univ., India (Sathyavathi, P.)
Abstract	Silicon diodes (p/sup +/n) of turn-off time, t/sub /spl pi///spl sim/1000 ns, were irradiated with 65 MeV oxygen ions to induce defects only in the p-region. The turn-off time, t/sub /spl pi// of the diodes decreased from its value of 1000 ns to 500 ns at a fluence of 10/sup 10/ ions/cm/sup 2/ and to 250 ns at a fluence of 5/spl times/10/sup 12/ ions/cm/sup 2/. The decrease in the turn-off time is attributed to the reduction in the hole-stored -charge in the n-region and also due to the increase in the reverse current, as a consequence of the defects induced in the p-region. A plot of the turn-off time, t/sub /spl pi// vs In(1+I/sub F//l/sub R/) revealed that the life-time of holes, /spl rho//sub p/ in the n-region remained unaffected after a fluence 10/sup 10/ ions/cm/sup 2/. These results indicate that by inducing defects near the junction in the p-region, the turn-off time, t/sub /spl pi// of silicon diodes can be reduced without killing the life-time of the holes, /spl tau//sub p/ in the n-region.
Starting Page	139
Ending Page	146
File Size	365962
Page Count	8
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924110
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	P-n junctions Tires Semiconductor diodes Silicon Voltage Contacts Gold Electrons Physics Manufacturing processes
Content Type	Text
Resource Type	Article

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