NDLI: Large area line beam formation in Nissin ion doping system for TFT LCD fabrication

Content Provider	IEEE Xplore Digital Library
Author	Andoh, Y. Inouchi, Y. Konishi, M. Tatemichi, J. Tanaka, H. Miyamoto, N. Matsuda, Y. Maeno, S. Naito, M.
Copyright Year	2000
Description	Author affiliation: Nissin Ion Equipment Co. Ltd., Kyoto, Japan (Andoh, Y.)
Abstract	The Nissin ion doping system ID6700 for TFT LCD fabrication uses a large area ion source generating a uniform line beam which irradiates a large glass substrate. A uniform ion beam can be obtained across a large substrate over 600 mm, which is automatically tuned by individually adjusting the heating currents of the three filaments based on the beam profile data taken by a built-in multiple-slot Faraday array. The fraction of hydrogen ions in the beam has been successfully reduced to less than 10% by preventing the hydrogen ion extraction by applying a magnetically retarding configuration in the source plasma. A unique mass separation structure using permanent magnets has been placed close to the beam extraction system of the bucket type ion source to form a purified large area uniform beam to process the large glass substrate with high throughput.
Starting Page	322
Ending Page	325
File Size	296955
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924153
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Thin film transistors Ion sources Glass Ion beams Hydrogen Fabrication Heating Particle beams Data mining
Content Type	Text
Resource Type	Article

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