NDLI: An investigation of species dependence in germanium pre-amorphized and laser thermal annealed ultra-shallow abrupt junctions

Content Provider	IEEE Xplore Digital Library
Author	Murto, R. Jones, K. Rendon, M. Talwar, S.
Copyright Year	2000
Description	Author affiliation: Int. SEMATECH, Texas Instrum., Austin, TX, USA (Murto, R.)
Abstract	An earlier study of the activation and deactivation characteristics of p- and n-type dopant materials in shallow pre-amorphized silicon layers showed varying melt depth for a constant laser energy with varying dopant species. Possible causes of this variation could be attributed to either laser repeatability issues on early test equipment or a species-related laser absorption effects. Species dependence process windows are of serious concern for minimizing process complexity in CMOS wafer manufacturing. This paper reports the results of an investigation into the dependence of laser annealed junction depth in germanium pre-amorphized silicon layers on varying doses of boron, arsenic: and phosphorus dopant species. A 10 keV, 1/spl times/10/sup 15/ ions/cm/sup 2/ germanium implant was used to amorphize the silicon surface and set the laser annealed junction depth. Low energy implantation was used to introduce 1 keV boron, 2 keV phosphorus and 5 keV arsenic at doses of 1/spl times/10/sup 15/ and 3/spl times/10/sup 15/ ions/cm/sup 2/ into the amorphous region. Laser thermal annealing was performed at energies from 0.3 to 0.68 J/cm/sup 2/. Four-point probe and secondary ion mass spectrometry analysis data are presented.
Starting Page	182
Ending Page	185
File Size	391519
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924120
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Germanium Silicon Annealing Boron Optical materials Test equipment Absorption CMOS process Manufacturing processes Implants
Content Type	Text
Resource Type	Article

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