NDLI: Boxer cross measurements of laser annealed shallow junctions

Content Provider	IEEE Xplore Digital Library
Author	Sing, D. Borden, P. Bechtler, L. Murto, R. Talwar, S.
Copyright Year	2000
Description	Author affiliation: Motorola Int. Sematech, Austin, TX, USA (Sing, D.)
Abstract	This paper discusses the characterization of the physical processes associated with the formation of ultra-shallow junctions using laser thermal annealing (LTA). Wafers were implanted with a Ge preamorphization implant (PAI) followed by a dopant implant of B, P, or As. The samples were then LTA processed with energies from below to above the energy density required to fully melt the PAI layer. The Boxer Cross CI Carrier Illumination/sup TM/ (CI) method was used to probe the LTA processed samples. The CI method utilizes a laser to photoelectrically generate charge carriers in silicon samples. A second laser beam is reflected by variations of the index of refraction resulting from depth variation of the induced carrier density. The transition in the CI response between amorphous recrystallization and the fully formed laser annealed junction is the subject of this investigation. The details of the dopant distribution, PAI depth, and degree of recrystallization are studied with SIMS and TEM imagery and compared to the CI signal and sheet resistance as functions of LTA energy.
Starting Page	646
Ending Page	649
File Size	387795
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924236
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Laser transitions Laser theory Implants Lighting Probes Charge carriers Silicon Laser beams Optical refraction
Content Type	Text
Resource Type	Article

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