NDLI: Gettering and annealing of silicon planar surface layer caused by opposite side implantation technique

Content Provider	IEEE Xplore Digital Library
Author	Troitski, V.Y. Gerasimenko, N.N. Smirnov, A.V.
Copyright Year	2000
Description	Author affiliation: Sci. Res. Inst. for Syst. Anal., Acad. of Sci., Moscow, Russia (Troitski, V.Y.)
Abstract	The paper provides the results of investigation of gettering and annealing of implanted silicon layers stimulated by high intensity ion implantation (HIII) of it's opposite side with different ions. It was shown that the energy of these high density ion beams can be successfully used for annealing of implanted layers with high ramp-up rates which leads to the formation of shallow junctions with efficient activation of dopants. At the same time if electrically active ions were used in HIII, a perfect single crystal layer with almost fully activated impurity was fabricated. All experimental results approved the existence of ion-induced mechanisms that accelerated recrystallization and electrical activation processes on both surfaces of the wafer.
Starting Page	334
Ending Page	337
File Size	319197
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924156
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gettering Silicon Temperature Ion beams Rapid thermal annealing Region 8 Ion implantation Rapid thermal processing Impurities Acceleration
Content Type	Text
Resource Type	Article

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