NDLI: Sub-melt laser annealing followed by low-temperature RTP for minimized diffusion

Content Provider	IEEE Xplore Digital Library
Author	Felch, S.B. Downey, D.F. Arevalo, A. Talwar, S. Gelatos, C. Wang, Y.
Copyright Year	2000
Description	Author affiliation: Varian Semicond. Equip. Assoc. Inc., Palo Alto, CA, USA (Felch, S.B.)
Abstract	The combination of sub-melt laser annealing plus low-temperature rapid thermal annealing (the V/sup 2/LTP Process) has been investigated for the formation of shallow doped regions with minimal thermal diffusion and without melting. In particular, the process can be used to form ultra-shallow, low sheet resistance junctions or deeper regions where thermal diffusion after implant is undesired. In this two-step process an implanted wafer is first laser annealed using a laser energy density that achieves a high wafer temperature (1100-1300/spl deg/C) but does not melt the silicon ("sub-melt"). This step achieves dopant activation to the desired level. Finally, the wafer is annealed with a low-temperature (650-850/spl deg/C) rapid thermal anneal. This process repairs crystalline damage from the implant so that devices have good mobilities and low leakage currents. SIMS and sheet resistance data have been measured for a wafer implanted with 1 keV B/sup +/ ions to a dose of 9/spl times/10/sup 14/ cm/sup -2/, then laser annealed below the melting threshold with 100 laser pulses, and finally rapid annealed at 700/spl deg/C for 20 sec. The SIMS profiles clearly show that no measurable diffusion has occurred during the V/sup 2/LTP process, and yet a sheet resistance of 360 /spl Omega/sq. was produced.
Starting Page	167
Ending Page	170
File Size	324818
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924116
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Rapid thermal annealing Rapid thermal processing Thermal resistance Implants Electrical resistance measurement Pulse measurements Temperature Silicon Crystallization Leakage current
Content Type	Text
Resource Type	Article

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