NDLI: Introduction of the Varian VIISta 3000 single wafer high-energy ion implanter

Content Provider	IEEE Xplore Digital Library
Author	Tokoro, N. Holbrook, D. Hacker, D.
Copyright Year	2000
Description	Author affiliation: Varian Semicond. Equip. Associates Inc., Newburyport, MA, USA (Tokoro, N.)
Abstract	Varian Semiconductor Equipment Associates, Inc. has developed the VIISta 3000 single wafer high-energy ion implanter to meet requirements of advanced 200 and 300 mm wafer processes. The basic design of this system consists of well established Tandetron/sup TM/ DC beamline architecture, the electrostatic beam scanning and dose control system developed for the VIISta 810 medium current ion implanter and the common endstation and control system developed for VIISta series ion implanters. Enabling transportation of the positive beam directly from the ion source to the wafer has significantly enhanced the low energy beam performance. This paper describes basic system design and performance of the VIISta 3000 high-energy ion implanter including the beam current performance, implant uniformity, dose shift due to photoresist outgassing, etc.
Starting Page	368
Ending Page	371
File Size	361862
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924164
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Control systems Magnetic separation Ion sources Magnetic analysis Particle beams Electrostatics Implants Resists Weight control Accelerator magnets
Content Type	Text
Resource Type	Article

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