NDLI: Molybdenum implantation of stainless steel in the near surface layer: structural and chemical exploration

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)

A personal historical perspective of ion implantation equipment for semiconductor applications

Trend of the CMOS process technology for system on a chip

Comparison of B and BF/sub 2/ source/drain extension implants for PMOS transistors with thin gate oxides

Optimization of short channel effect by arsenic P-halo implant through polysilicon gate for 0.12 um P-MOSFET

Microstructure and electrical properties of Ge- and Si-nanoclusters in implanted gate oxide for embedded memory applications

SiGe device architectures synthesised by local area Ge/sup +/ implantation-structural and electrical characterisation

Application of indium ion implantation for halo doping: experimental and simulation results for advanced CMOS devices

Junction capacitance reduction by S/D junction compensation implant

Optimization of n-junction through ion beam shadowing and buffering effect by tilt implantation with rotation for improving the retention time

Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation

Electrical activation of B implanted in silicon at energies below 1 keV

Indium beam implantation

Investigation of indium activation by C-V measurement

Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers

Technical and economic considerations for retrograde well and channel implants

Challenges and solutions in the process integration of ultra-shallow junctions in advanced CMOS technology

Soft error improvement in SRAMs by ion implanted shallow well structure

Improvement of p/sup +/ contact resistance through optimal boron distribution TiSi/sub 2//P/sup +/ interface for 0.18 /spl mu/m DRAM technology and beyond

Junction profiles of sub keV ion implantation for deep sub-quarter micron devices

FEOL technologies for fabricating high performance logic and system LSI of 100 nm node

Ion-implanted silicon detectors of nuclear radiation

Distribution of ion implanted dopants in gallium nitride

Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides

Energetics of interstitial defects and TED in ultra low energy implants

Boron diffusion upon annealing of laser thermal processed silicon

Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050/spl deg/C

Medium energy ion scattering analysis of damage in silicon caused by ultra-low energy boron implantation at different substrate temperatures

Transformation of implantation induced interstitial point defects in dislocation loops

Comparative analysis of parameters of deep levels in the ion implanted layers and fast electron-irradiated structures

Ion implantation induced damage in silicon carbide studied by non-Rutherford elastic backscattering

Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes

Tailoring of the switching time of p-n junction diodes by inducing defects in the p-region with swift heavy ions

Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation

Advanced optical model for the ellipsometric study of ion implantation-caused damage depth profiles in single-crystalline silicon

Activation and deactivation studies of laser thermal annealed boron, arsenic, phosphorus, and antimony ultra-shallow abrupt junctions

Influence of RTP flash anneal ramp rates on lithography overlay performance on 300 mm integrated wafers

Novel aspects of the atomic transport of B implanted in silicon at energies below 1 keV

Sub-melt laser annealing followed by low-temperature RTP for minimized diffusion

The role of fluorine on reducing TED in boron implanted silicon

Study of laser thermal processing (LTP) to meet sub 130 nm node shallow junction requirements

The influence of substrate temperature and the anneal ambient on the redistribution of arsenic implanted into silicon at ultra-low energy

An investigation of species dependence in germanium pre-amorphized and laser thermal annealed ultra-shallow abrupt junctions

The influence of "off-axis" from [100] oriented Si wafers on junction depth and sheet resistance for low-energy implantation and rapid thermal annealing

Effects of pre-amorphization on junction characteristics and damage behavior in low energy boron implantation

Formation of ultra-shallow junction by BF/sub 2//sup +/ implantation and spike annealing

RTP for shallow junction formation-monitoring with repeatable, reliable sheet resistance measurements

Parallel Monte Carlo simulation of ion implantation

Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon

Process simulator for plasma enhanced sputter deposition system

The ion dechanneling mechanism at grazing scattering on the surface atomic steps

Atomistic simulation of ion implantation into different polytypes of SiC

Simulation of ultra-low energy ion implantation from a remote plasma source using Monte Carlo techniques

Computer simulation of ion implantation with visual observation of the implantation profiles

Computer simulation of ion implantation at grazing ion-surface interactions

Range parameters of heavy ions in light targets

A simulation study of CMOS performance improvement by laser annealed source/drain extension profiles

Modeling of implanted ion distribution in A/sup III/B/sup V/ semiconductors

Modeling photoresist outgassing pressure distribution using the finite-element method

Modeling the amorphization of Si due to the implantation of As, Ge, and Si

Smart-Cut(R) process: an original way to obtain thin films by ion implantation

Synthesis of SOI material using low energy water ion implantation

Role of buried oxide microstructure in dosimetry of implanted oxygen in SIMOX technology

SMART-CUT(R) technology for SOI: A new high volume application for ion implantation

Deep levels in SOI-structures investigated by charge and capacitance DLTS

Energy dependence of low dose SIMOX wafers

XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX

Instability study of partially depleted SOI-MOSFET due to floating body effect using high energy nuclear microprobes

A plasma immersion ion implantation system for SOI wafer fabrication

Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing

Decaborane, an alternative approach to ultra low energy ion implantation

Decaborane ion implantation

Doping of the poly-gate by beamline implantation and plasma doping and its influence on the gate oxide reliability

Epi-replacement in CMOS technology by high dose, high energy boron implantation into Cz substrates

Updated technology of ion implantation applicable low-temperature poly-Si TFT process

Large area line beam formation in Nissin ion doping system for TFT LCD fabrication

Substrate engineering by hydrogen or helium implantation for epitaxial growth of lattice mismatched Si/sub 1-x/Ge/sub x/ films on silicon

Fluorine ion implantation into silicon dioxide to form stable low-k intermetal dielectric films

Gettering and annealing of silicon planar surface layer caused by opposite side implantation technique

Characterizing nitrogen implant effects on 0.17 /spl mu/m gate oxide thickness and charge-to-breakdown

Ion implantation of N into Si and SiO/sub 2//Si in the 1-1000 eV energy range for gate dielectric fabrication

Nitrogen ion dose dependence of surface morphology of titanium nitride films deposited on gallium arsenide by an ion beam assisted deposition technique

An oxygen ion dose dependence of dielectric constant and surface roughness of titanium oxide films deposited on silicon by an ion beam assisted deposition technique

Manufacturing science in ion implantation

300 mm implant: pilot production at SEMICONDUCTOR300

Process performance for Axcelis MC3 300 mm implanter

Introduction of the Varian VIISta 3000 single wafer high-energy ion implanter

The Hitachi advanced implanter UI-6000 for SIMOX wafer production

Electrical comparison of parallel beam and batch implanters

Throughput and production data on the GSD-HE using the continuous variable aperture

New design of a decelerator module for ultra low energy implantation

Decel lens system for low-energy ion implantation with high dose uniformity

Performance of IW-630 ion implanter for 300-mm wafers

The influence of plasma boundary shape on the transport of energetic ion beams

Method to evaluate LINAC dataset efficiency on the Axcelis GSD/HE class high energy implanters

Beam optics of the VIISta 3000 ion implanter

Energy enhancement on NV-GSD-HE

High energy, high current performance of the GSD/VHE implanter for the production of high dose p-type buried layers

Nissin 300 mm medium current ion implanter EXCEED2300

Achieving next generation performance of ion implanters with the Varian Control System (VCS)

Reduction of beam dropout related defects in a hybrid scan implanter

Electrostatic scanning of MeV ion beams

Advantages of the varian VIISta single wafer high current ion implanter for advanced device fabrication

Performance characteristics of the Varian VIISta 810 single wafer medium current ion implanter

Improved cooling on the Varian VIISta series ion implanters

Indium implantation process performance on the 8250/sub HT/

Energy accuracy and control method of the NV-GSD-HE

Beam autotuning on the VIISta 810 ion implanter

Improved cooling on the Varian E220/E500 series implanters

Plasma immersion ion implantation as an alternative deep trench buried-plate doping technology

Effects of dopant deposition on p/sup +//n and n/sup +//p shallow junctions formed by plasma immersion ion implantation

Direct comparison of electrical performance of 0.1-/spl mu/m pMOSFETs doped by plasma doping or low energy ion implantation

Plasma doping system for 200 and 300 mm wafers

Phosphorus ion shower implantation for special power IC applications

Oxide uniformity and dimer ratio effects on overall phosphorous dose uniformity in a non-mass resolved ion implanter

Ion energy distributions in plasma immersion ion implantation-theory and experiment

Comparison of ultra-shallow junctions with PLAD and beamline implantation

Implant dosimetry results for plasma doping

Solid state pulsed power systems for plasma immersion ion implantation

Contamination control in a pulsed plasma doping tool

Plasma characterization of a plasma doping system for semiconductor device fabrication

Formation of textured TiN-layers on Si by metal plasma immersion ion implantation and deposition

Preparation of diamond-like carbon films by plasma source ion implantation with superposed pulse

Steady-state, direct-current (DC) plasma immersion ion implantation (PIII) for planar samples

Enhancing B/sup +/ ion current by adding MgO to the chamber material of a microwave ion source

Modifications to improve lifetime of the ELS ion source

Decaborane ion source demonstration

Emittance considerations in ion source design and operation

Advantages of AsF/sub 5/ dopant gas in a RF ion source

Increased ion source life for Varian's kestrel implanter

SbF/sub 3/ as vaporizer feed material for the Bernas dual vaporizer in the VSEA E220/500 implanters

Production of multiply charged Si and Fe ions from solid material in a 2.45 GHz electron cyclotron resonance source

High purity RF-sputter type metal ion source for non-mass-separated ion beam deposition

Characterization of a Xenon plasma electron flood gun on a GSD-200E/sup 2/ high current implanter using Q/sub BD/, FLASH, SPIDER, and CHARM/sup TM/-2 wafers

Implant charging dependence on photo resist bake and electron flood gun

Characterization of charging damage in high power implants using SPIDER wafers

Evaluation of different wafer charging metrology protocols for thin dielectrics

Influence of scribe lanes on wafer potentials and charging damage

High energy, low dose ion implantation monitoring and characterization using the C(V) technique

In situ charging potential monitoring for a high current ribbon beam

Wafer charge monitoring by disk current

Two implant measurement of pressure compensation factors

Performance of a plasma flood gun in the medium current ion implanter Exceed200OA

A low energy plasma flood gun using RF plasma formation

Evaluation of tests to examine charging damage in ion implantation and plasma processes: using controlled stress environments

Arsenic clustering and precipitation analysis in ion-implanted Si wafers by X-ray absorption spectroscopy and SIMS

Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling

Non-contact, in-line monitoring of low dose and low energy ion implantation

A parametric investigation of a high current implanter for long term process performance improvements

VIISta 810 dosimetry performance

Beam noise as a tuning aid for low energy ion beams

How to monitor a sub-keV USJ implant

Charge exchange cross sections relevant to ion implantation for ultra shallow junctions

SIMS quantification round-robin study at Evans analytical group

In-line characterization of preamorphous implants (PAI)

Low and high dose process monitoring using the BX-10 implant monitor system

The significance of controlling "off-axis" (from 1-0-0) oriented Si wafers during high angle implants

Boxer cross measurements of laser annealed shallow junctions

Beam incidence angle control advantages of high-current single wafer implanters

A new tool for nondestructive monitoring of ion implantation

Dose uniformity of sub-keV implants

Monitoring system for silicon coating thickness of disk

Dosimetry enhancements for Varian's high-energy ion implanters

Control of channeling uniformity for advanced applications

Therma-wave dose sensitivity considerations, including energy dependence

Transient effects in SIMS depth profile analysis of 1 keV as implanted Si

Dose control accuracy in pressure compensation

Metal contamination reduction in the evolution of ion implantation technology

Monte Carlo simulation and modeling of ion implantation induced contamination profiles

Defects and gallium-contamination during focused ion beam micro machining

Energy contamination control system in deceleration beam line

Cross-contamination reduction by beam cleaning

Reducing arsenic to germanium cross contamination with isotopically enriched SDS /sup 72/GeF/sub 4/

Investigation of molybdenum contamination in /sup 11/B/sup +/ and /sup 31/P+ implants

Advances in cross-contamination control using single-wafer, high-current implantation

Study of indium cross contamination in quarter micron device implants

Vacuum actuated gas delivery

Performance comparison of enriched versus non-enriched SDS GeF/sub 4/

Abatement of effluent species from ion implantation process

Impact of gas panel components on SDS(R) gas utilization

Certification of the Varian VIISion Implanter for SDS(R)

Characterization of the SDS(R) gas source adsorbent technology

Negative-ion implanter and formation of metal nanoparticles in glass

A dynamic negative-ion mixing method using high-current heavy ions and electron beam evaporation

Study of ion-induced damage in Li/sub 2/TiO/sub 3/ ceramics

Modeling of the formation and properties of nanocrystals in insulator matrices (SiO/sub 2/:Si, ZrO/sub 2/(Y):Zr) produced by ion implantation

Molybdenum implantation of stainless steel in the near surface layer: structural and chemical exploration

Intense UV-visible photoluminescence from Si/sup +/ and N/sup +/ co-implanted thermal SiO/sub 2/ films

Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation

Structural properties of sulfur-implanted diamond single crystals

Corrosion resistance of nitrogen ion implanted titanium alloy for medical implants in physiological saline solution

Embedded iron nanoclusters prepared by Fe ion implantation and GMR property

Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

Implantation effects of ultra-thin Fe/Cr multilayers

200 keV ion implantation experiments in very high dose region

Effect of implanted-helium depth profile on damage structures in electron-irradiated stainless steel

Nano-cluster engineering: a combined ion implantation and ionizing radiation

Implantation mode dependence of damage structure depth profiles in Al/sub 2/O/sub 3/ irradiated with triple beam of H, He and heavy ions

Ion implantation technique using negative ions for artificial neuron network on polystyrene in cell culture

Photoresist properties during high current implantation: an I-line vs. DUV resist comparison

Improved photoresist integrity by UV photostabilization for high dose, high energy ion implants

Focused ion beam processing of metal gated field emitter arrays

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

Proceedings of 11th International Conference on Ion Implantation Technology

Molybdenum implantation of stainless steel in the near surface layer: structural and chemical exploration

Content Provider	IEEE Xplore Digital Library
Author	Mottu, N. Vayer, M. Andreazza, P. Benoit, R. Sauvage, Th. Erre, R.
Copyright Year	2000
Description	Author affiliation: Div. of Mater., Orleans Univ., France (Mottu, N.)
Abstract	Mo/sup +/ at 49 keV was implanted on a 316LVM stainless steel in order to modify the first layer within 30 nm. Doses from 1.10/sup 15/ to 35.10/sup 15/ ion/cm/sup 2/ were explored. GIXD showed that implanted Mo first substituted Fe in the austenitic lattice, then formed a new structure and finally amorphised the layer. TRIM calculation and RBS estimation were in good agreement on implanted doses and Mo depth profiles. XPS permitted the identification of the chemical species. The passive layer was modified by Mo implantation. Indeed, about half of Cr oxide was replaced by Mo oxide.
Starting Page	761
Ending Page	764
File Size	322991
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924265
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Steel Surface resistance Iron Lattices Chromium Corrosion Immune system Chemical elements Spectroscopy Chemical analysis
Content Type	Text
Resource Type	Article

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