NDLI: Performance comparison of enriched versus non-enriched SDS GeF/sub 4/

Content Provider	IEEE Xplore Digital Library
Author	Hess, D. Hensley, T. Brown, B.
Copyright Year	2000
Description	Author affiliation: Philips Semicond., Albuquerque, NM, USA (Hess, D.)
Abstract	The use of germanium as a preamorphization implant to control channeling in a subsequent boron implant, and in reducing the resistance of titanium silicide has been published. However, since the most abundant naturally occurring isotope of germanium is /sup 74/Ge, counter doping from arsenic residuals in the implanter is a concern. The implanter's capability to resolve unwanted species and produce high current beams of the desired isotope is also challenged with natural abundance germanium. Isotopically enriched SDS /sup 72/GeF/sub 4/ is proposed as a solution for these problems. Spectra of both natural abundance and mass 72 enriched GeF/sub 4/ SDS were compared and the abundance of each isotope measured. Beam current performance of the two gases is also compared. SIMS analysis is used to quantify both the implanter's ability to resolve enriched /sup 72/Ge and the efficiency of various cleaning techniques to remove arsenic residuals from the ion source and beamline.
Starting Page	726
Ending Page	729
File Size	328729
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924256
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Germanium Isotopes Implants Boron Titanium Silicides Counting circuits Doping Gases Cleaning
Content Type	Text
Resource Type	Article

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