NDLI: Structural properties of sulfur-implanted diamond single crystals

Content Provider	IEEE Xplore Digital Library
Author	Hasegawa, M. Ogura, M. Takeuchi, D. Yamanaka, S. Watanabe, H. Sung-Gi Ri Kobayashi, N. Okushi, H.
Copyright Year	2000
Description	Author affiliation: Electrotech. Lab., Ibaraki, Japan (Hasegawa, M.)
Abstract	The lattice location of sulfur implanted into diamond single crystals has been investigated using particle induced X-ray emission and ion channeling. Sulfur atoms were implanted into high-quality undoped homoepitaxial diamond [100] film grown by microwave plasma assisted chemical vapor deposition onto high-temperature and high-pressure synthetic Ib diamond [100] substrates, as well as into Ib diamond substrates directly, at 400/spl deg/C up to the concentration of 1/spl times/10/sup 20//cm/sup 3/. They were annealed at 800/spl deg/C in vacuum for 100 min after the implantation. Sulfur dopant was found to occupy preferentially substitutional sites in the host lattice. The possible maximum displacement of sulfur dopant was 0.14 A from <001> axis, and 0.07 A from <011> axis. The substitutional fraction of sulfur was 0.5 and 0.7 along <001> and along <011> direction, respectively. The depth profile of sulfur distribution measured by SIMS coincides with that of simulated vacancy depth profile associated with the sulfur implantation, rather than expected dopant distribution. These results suggest the redistribution of sulfur, and possible sulfur-residual damage (vacancy) coupling in the diamond crystal after the implantation.
Starting Page	773
Ending Page	776
File Size	341169
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924268
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomic measurements Plasma temperature Crystals Annealing Lattices Atomic layer deposition Substrates Chemical vapor deposition Boron Laboratories
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in