NDLI: Study of the return loss performance of an improved TSVs structure

Content Provider	IEEE Xplore Digital Library
Author	Zuo Guoyi Miao Min Li Zhensong
Copyright Year	2014
Description	Author affiliation: Inf. Microsyst. Inst., Beijing Inf. Sci. & Technol. Univ., Beijing, China (Zuo Guoyi; Miao Min)
Abstract	With the development of the integrated circuits, there is an inevitable trend in the development of the electronics industry, that the electronic devices become much smaller in shape, and integrated with higher density within, and more and more functionality. 3D SIP (System in Package) has become the mainstream technology for the microsystem integration. Meanwhile, the through silicon via (TSV) is the core to the 3D SIP and even to the three-dimensional integrated circuit (3D IC). In this paper, an improved TSVs structure is put forward and analyzed in this paper. We used finite element method simulation to illustrate the return loss performance. And the results dedicates that the return loss performance of the improved TSV structure is better than traditional TSV. And some factors that affect the performance of the improved TSV have been analyzed.
Starting Page	466
Ending Page	469
File Size	830472
Page Count	4
File Format	PDF
ISBN	9781479947072
DOI	10.1109/ICEPT.2014.6922697
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-08-12
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Through-silicon vias Three-dimensional displays Solid modeling Simulation Electronics packaging Silicon Packaging return loss 3D intergration TSV
Content Type	Text
Resource Type	Article

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