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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Laicun Lin Mingchuan Zhang Delong Qiu Xiangmeng Jing Feng Jiang Daquan Yu |
| Copyright Year | 2014 |
| Description | Author affiliation: Nat. Center for Adv. Packaging (NCAP), Wuxi, China (Laicun Lin; Mingchuan Zhang; Delong Qiu; Xiangmeng Jing; Feng Jiang) || Microsyst. Packaging Res. Center, Inst. of Microelectron., Beijing, China (Daquan Yu) |
| Abstract | Through glass via (TGV) technology is considered to be a cost effective enabler for micro electromechanical systems (MEMS) and radio frequency (RF) system-in-package (SIP) technology. Inductively coupled plasma (ICP) and the Bosch etching process comprise one of the most pervasive methods for via formation in silicon. Unfortunately an equivalently process for glass remains elusive. In this paper, the influences of three process parameters, bias power, argon (Ar) flow rate and substrate temperature, on fused silica glass etching in $Ar/C_{4}F_{8}$ inductively coupled plasmas was investigated. High glass etching rate more than lμm/min was obtained when chiller temperature was fixed at 40 °C. The results show that bias power and temperature have a significant impact on the etch rate and that the flow rate and ratio of $Ar/C_{4}F_{8}$ can be used to control the via profile. |
| Starting Page | 334 |
| Ending Page | 339 |
| File Size | 790616 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781479947072 |
| DOI | 10.1109/ICEPT.2014.6922667 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-08-12 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Glass Etching Silicon compounds Silicon Plasma temperature etch rate TGV ICP etching |
| Content Type | Text |
| Resource Type | Article |
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