NDLI: Modelling of Semi-Insulating Photorefractive Quantum Well Devices

Content Provider	IEEE Xplore Digital Library
Author	Pleumeekers, Jacco L. Mottet, Serge
Copyright Year	1995
Description	Author affiliation: Delft University of Technology, Faculty of Electrotechnical Engineering, Mekelweg 4, Delft, The Netherlands (Pleumeekers, Jacco L.) \|\| France Telecom - CNET, LAB/FCI/PIH, 2 Avenue P. Marzin, 22307 Lannion, France (Mottet, Serge)
Abstract	The photorefractive effect in electrooptic materials provides a very promising tool for image processing applications. Semiconductor multiple quantum well (MQW) structures are attractive materials due to the short response time and the high value for the electrooptic coefficient. If the electric field is applied perpendicular to the MQW planes, than the electrooptic behaviour is associated with the quantum confined Stark effect for excitons in the wells. In these photorefractive multiple quantum well devices, a complicated interaction takes place between the electrons, holes, excitons, photons and deep-level charges. For a better understanding of the internal behaviour of these photorefractive multiple quantum well devices, a numerical simulator was built.
Starting Page	797
Ending Page	800
File Size	968262
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	Photorefractive effect Photorefractive materials Semiconductor materials Quantum well devices Excitons Image processing Delay Potential well Stark effect Charge carrier processes
Content Type	Text
Resource Type	Article

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