NDLI: Novel InP/GaInAs MSM Photodetector for Integration in HEMT Circuits

Content Provider	IEEE Xplore Digital Library
Author	Horstmann, M. Marso, M. Schimpf, K. Ruders, F. van der Hart, A. Hollfelder, M. Hardtdegen, H. Kordos, P. Luth, H.
Copyright Year	1995
Description	Author affiliation: Institut für Schicht-und Ionentechnik (ISI), Forschungszentrum Jülich GmbH (KFA), D-52425 Jülich, Germany (Horstmann, M.; Marso, M.; Schimpf, K.; Ruders, F.; van der Hart, A.; Hollfelder, M.; Hardtdegen, H.; Kordos, P.; Luth, H.)
Abstract	We report on the investigation of the optoelectric properties of a Metal-Semiconductor-Metal (MSM) photodetector (PD) based on two-dimensional electron gas (2DEG). The layer sequence is compatible to an Al-free High Electron Mobility Transistor (HEMT) layer stucture in the InP/GaInAs material system [1]. Therefore our device can easily be integrated into HEMT circuits. The photoresponse of the MSM-2DEG photodetector was measured by an optoelectric rf-equipment and an electro-optic laser sampling equipment. With the rf equipment we measured a Full Width at Half Maximum (FWHM) of about 60ps at 1.3¿m wavelength. The -3dB bandwidth was limited by parasitics to 3.8GHz. The value of the dc responsitivity was 0.4A/W without an antireflexion coating. The laser sampling measurements were performed at 875nm and 890nm, and a FWHM of about 1ps. was found. To proof our concept of simple integration, HEMTs were processed on the same wafer with gatelengtis in the range from 1.5¿m to 0.2¿m. Cutoff frequencies f=45GHz and f=85GHz were measured on a 0.35¿m gatelength device.
Starting Page	443
Ending Page	446
File Size	1162044
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	Indium phosphide Photodetectors HEMTs Wavelength measurement Integrated circuit measurements Sampling methods Electrons MODFETs Optical materials Gas lasers
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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