NDLI: Linear and Enhanced Transconductance using High-Medium-Low Doped Channel

Content Provider	IEEE Xplore Digital Library
Author	Lour, Wen-shiung Liu, Wen-Chau Tsai, Jung-Hui Laih, Lih-Wen
Copyright Year	1995
Description	Author affiliation: Department of Electrial Engineering, National Cheng-Kung University, 1 University Rd., Tainan, TAIWAN, Republic of China. (Liu, Wen-Chau; Tsai, Jung-Hui; Laih, Lih-Wen) \|\| Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Rd., Keelung, TAIWAN, Republic of China. (Lour, Wen-shiung)
Abstract	We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with $n^{+}$ and $p^{+}$ layers establishes high-performance camel diode, which exhibits a high effective potential barrier of ≫ 1.0 V and a gate-drain breakdwon voltage of around 21 V (at I= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 $¿m^{2}$ camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of ≫ 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.
Starting Page	177
Ending Page	180
File Size	325557
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	Transconductance Linearity Diodes MESFET circuits FETs Current density Breakdown voltage Current measurement Thickness measurement Oceans
Content Type	Text
Resource Type	Article

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