NDLI: Comparison of P In Situ Spike Doped with as Implanted Poly Silicon Emitters Concerning Si/SiGe/Si HBT Application

Content Provider	IEEE Xplore Digital Library
Author	Knoll, D. Heinemann, B. Ehwald, K.E. Schley, P. Ropke, W. Bolze, D. Schlote, J. Herzel, F. Fischer, G.
Copyright Year	1995
Description	Author affiliation: Institute for Semiconductor Physics, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany (Knoll, D.; Heinemann, B.; Ehwald, K.E.; Schley, P.; Ropke, W.; Bolze, D.; Schlote, J.; Herzel, F.; Fischer, G.)
Abstract	Variants of P in situ spike doped poly-Si emitters are compared with an As implanted poly-Si emitter for use in HBTs. The main goal is the optimization of the thermal process after emitter doping. The base B diffusion is shown to be stronger influenced by the emitter dopant outdiffusion for P than for As. This effect is investigated by means of an improved B SIMS profiling, and by CV measurements at the junctions of large HBTs. The measured ac parameters of HBTs grown by MBE, RTCVD or APCVD differ in dependence on the emitter variant, first of all by the different emitter dopant outdiffusion influencing the low doped emitter (LDE) region. To quantify the outdiffusion behaviour, a $n^{+}p$ diode CV profiling of a B marker implant is used. The stronger outdiffusion of the furnace annealed P emitter compared to the RTP annealed and the As emitter, respectively, also increases the recombination controlled HBT base currents at low V due to a shift of the emitter-base (EB) space-charge region (SCR) deeper into the SiGe layer. A limit for reducing the annealing budget of the P in situ spike doped emitters (down to 800°C, 30s) is given both by increasing poly-Si series resistances and by contact resistances of the used Pt silicide but not by increased hole recombination. Considering all results, the P in situ doped poly-Si emitter with 2 doping spikes annealed by a short 850°C step should be a promising variant for HBT technologies.
Starting Page	627
Ending Page	630
File Size	384613
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Annealing Doping Diodes Implants Furnaces Thyristors Silicides
Content Type	Text
Resource Type	Article

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