NDLI: A Novel IC Compatible Push-Pull Mach-Zehnder Interferometer Optomechanical Pressure Sensor

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State of the Art and Trends in III*V ICs for Commercial Applications

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Physical Limitation on Drain Voltage of Power PM HEMT

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Linear and Enhanced Transconductance using High-Medium-Low Doped Channel

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Physical Modelling of Thin Base n-p-n Bipolar Transistor with Contact Silicidation

Determination of Vacancy Concentration in Float Zone and Czochralski Silicon

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A SOI 0.1 μm Epitaxial-Channel MOSFET

Comparison of Self-Heating Effects in SOI and GAA Devices

A Lateral Bipolar Transistor on SOI Fabricated by a Direct-Write Sub-100-nm Electron Beam Lithography

Soft Breakdown of Ultra-Thin Gate Oxide Layers

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Effects of NO-anneal Induced Nitrogen Residue at LOCOS Isolation Edges on Dielectric Breakdown of Regrown Oxides

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Plasma Etching Induced Gate Oxide Leakage

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Protection of DRAM Spatial Light Modulators from Incident Light using a Multilevel Metallization Procedure

An Integrated Surface-Oriented P-I-N Device Designed for Quasi Optical Modulation

Coupling of Waveguides and Photodetectors for Microsystem Applications

A Novel IC Compatible Push-Pull Mach-Zehnder Interferometer Optomechanical Pressure Sensor

PMOSFET Hot-Carrier Degradation Mechanisms

Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides

Modeling Hot Spot in Ultrashort Gate Length Pseudomorphic HEMTs

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Application of Device Simulations to Radiation Hardening Studies

Study of LDD Implantation Influence on ESD Failure Threshold using Electrothermal Simulation

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SiGe Heterojunction Bipolar Transistors: The First Ten Years

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A Premetal BPSG Filled Deep Trench Isolation Technology for ECL-BiCMOS LSIs using CMP

Phosphorus in the Polysilicon TiSi System: Dopant Redistribution

Analysis of Parasitic Effects in Advanced Isolation Schemes for Deep Submicron CMOS Technologies

Preamorphization Induced Defects and their Effects on the Electrical Properties of Shallow p+/n Junctions

An Intensive Study of LPCVD Silicon Morphology and Texture for Non Volatile Memory Application

Layout Optimalisation for Bipolar Power Transistors

Modelling of Impact Ionization Current for LDD SOI MOSFETs

Layout Extraction of 3D Models for Interconnect and Substrate Parasitics

Electroless Plating for Bump and Flip-Chip Technology

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Engineering of the Polysilicon Emtter Interfacial Layer using Low Temperature Thermal Re-Oxidation in an LPCVD Cluster Tool

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Electrical Characteristics of Low Thermal Budget Polysilicon Emitters for Si/Si Heterojunction Bipolar Transistors

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Low Energy Electroluminescence Spectra on InP based HEMTs at Cryogenic Temperatures

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Demonstration of Enhanced Base Diffusion Due to Extrinsic Base Implantations in Submicron, Polysilicon-Emitter, Epitaxial Base Bipolar Transistors

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Nucleation Control for High Quality Polycrystalline Ge Thin Film Transistors

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Accurate Threshold Voltage Measurement for Use with SOISPICE

Characterisation of the Overlap Capacitance of Submicron LDD MOSFETs

Enhanced Worst-Case Simulation Utilising Regression based Performance Spread

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Impact OF 0.25 μm NMOS Drain Engineering on Performance and Reliability

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A Novel IC Compatible Push-Pull Mach-Zehnder Interferometer Optomechanical Pressure Sensor

Content Provider	IEEE Xplore Digital Library
Author	Benaissa, K. Nathan, A.
Copyright Year	1995
Description	Author affiliation: Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1 (Benaissa, K.) \|\| Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1; Physical Electronics Laboratory, ETH Hoenggerberg, CH-8093 Zurich, Switzerland (Nathan, A.)
Abstract	We present a novel optomechanical Mach-Zehnder interferometer (MZI) pressure sensor that operates in push-pull mode to exploit the directional nature of the optical phase change with applied pressure. The sensor is based on the antiresonant reflecting optical waveguide (ARROW) and fabricated on silicon substrate using IC-compatible oxide and nitride dielectrics. In push-pull operation mode, the interferometer sensitivity to pressure is increased by 80% to attain 180¿rads/Pa.
Starting Page	289
Ending Page	292
File Size	1886366
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	Optical sensors Optical interferometry Optical waveguides Optical refraction Optical variables control Optical buffering Dielectric substrates Optical device fabrication Optical propagation Optical losses
Content Type	Text
Resource Type	Article

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