NDLI: New Evidence for Velocity Overshoot in a 200 nm Pseudomorphic HEMT

Content Provider	IEEE Xplore Digital Library
Author	Babiker, S. Cameron, N. Asenov, A. Beaumont, S.P.
Copyright Year	1995
Description	Author affiliation: Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, Glasgow University, G12 8QQ (Babiker, S.; Cameron, N.; Asenov, A.; Beaumont, S.P.)
Abstract	It is believed that significant velocity overshoot effects are responsible for the high performance of Pseudomorphic HEMTs (PsHEMTs) with InGaAs channels grown on GaAs substrates. The expected overshoot is associated with the low effective mass in the channel and the large ¿ - L separation and is clearly demonstrated in numerous Monte Carlo simulations. Average electron velocities well in excess of $3.0×10^{7}$ cm/s have been predicted. However, average electron velocities extracted form transconductance measurements of such devices are much lower, typically in the range 1.5 - $2.0×10^{7}$ cm/s. Although there are some explanations in the literature for why such discrepancies exist in the extracted effective velocity they are based on Monte Carlo simulation itself without direct links to real fabricated and measured devices. In this paper we analyse for the first time real device measurements by using Monte Carlo and drift diffusion simulations. We obtain clear evidence that the average velocity in the channel of 200 nm PsHEMT fabricated in the Nanoelectronics Research Centre of Glasgow University exceeds $3.0×10^{7}$ cm/s.
Starting Page	173
Ending Page	176
File Size	873209
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	PHEMTs Electrons Velocity measurement Indium gallium arsenide Gallium arsenide Effective mass Transconductance Monte Carlo methods Analytical models Nanoelectronics
Content Type	Text
Resource Type	Article

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