NDLI: A Novel Technique for Strain Measurements in Encapsulated-Layers

Content Provider	IEEE Xplore Digital Library
Author	French, P.J. Goosen, J.F.L. de Boer, C. Wolffenbuttel, R.F. Sarro, P.M.
Copyright Year	1995
Description	Author affiliation: Lab. for Electronic Instrumentation, Dept. of Electrical Eng., Delft University of Technology, The Netherlands., Tel +31-15-784729, Fax +31-15-785755 (French, P.J.; Goosen, J.F.L.; Wolffenbuttel, R.F.) \|\| DIMES, Delft University of Technology, The Netherlands., Tel +31-15-784729, Fax +31-15-785755 (de Boer, C.; Sarro, P.M.)
Abstract	With the increasing complexity of both microelectronics and micromechanics has come a greater need to accurately characterise the mechanical properties of deposited layers. In the case of microelectronics mechanical stress can have a detrimental effect on transistor characteristics, whereas in micromechanics the stress may cause buckling or mechanical failure. There are several techniques available for measuring the mechanical stress or strain in deposited layers. If however multiple layers are required there are three considerations; 1) the stress of the total structure, 2) the stress in each layer and 3) the effect of deposited layers on underlying layers. At Delft University a simple method has been developed for measuring strain using a micromachined pointer which can measure both tensile and compressive strain. This method involves the use of a surface micromachined device which must be released in HF. If the layer to be measured is attacked by the sacrificial etchant, an encapsulation in polysilicon is used as a protection layer. This technique can be used to measure intermediate layers. This paper examines the problems of measuring the mechanical strain in multiple layers. Two main questions are addressed. The first is the effect of deposited layers on the mechanical properties of the underlying layers. The second is the use of encapsulation of the layer to be measured. A method has been developed to minimise the effect of the encapsulation on the strain measurements.
Starting Page	597
Ending Page	600
File Size	788240
Page Count	4
File Format	PDF
ISBN	286332182X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-25
Publisher Place	The Netherlands
Access Restriction	Subscribed
Rights Holder	Editions Frontieres
Subject Keyword	Strain measurement Encapsulation Microelectronics Mechanical factors Mechanical variables measurement Compressive stress Tensile stress Tensile strain Stress measurement Hafnium
Content Type	Text
Resource Type	Article

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