NDLI: Direct-gap 2.1–2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers

Content Provider	IEEE Xplore Digital Library
Author	Vaisman, M. Mukherjee, K. Masuda, T. Yaung, K.N. Fitzgerald, E.A. Lee, M.L.
Copyright Year	2015
Description	Author affiliation: Massachusetts Inst. of Technol., Cambridge, MA, USA (Mukherjee, K.; Fitzgerald, E.A.) \|\| Yale Univ., New Haven, CT, USA (Vaisman, M.; Masuda, T.; Yaung, K.N.; Lee, M.L.)
Abstract	AlInP offers the highest direct bandgap (Eg) among non-nitride III-V materials, making it attractive for top cell applications in 5-6 junction solar cells. We present novel 2.07-2.19 eV, direct-gap AlInP solar cells, grown on GaInAs/GaAs graded buffers by metal-organic chemical vapor deposition. Despite the high Al content of 36-39% in the active regions, SIMS results indicate oxygen concentrations less than $2.3×10^{16}$ $cm^{-3}.$ The AlInP devices we present here exhibit superior photovoltaic performance to GaP and are comparable to metamorphic GaInP solar cells, reaching a Eg-voltage offset of 0.58 V. Design enhancements based on device and material characterization led to improvements of up to 65% in short circuit current density from our first-generation AlInP devices. The promising results in this work provide an alternative path towards realizing high-Eg top junctions with applications in upright metamorphic multijunction solar cells.
Starting Page	1
Ending Page	4
File Size	1148035
Page Count	4
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7356435
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Zinc Photonic band gap Junctions Photovoltaic systems Physics photovoltaic cells AlInP wide bandgap
Content Type	Text
Resource Type	Article

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