NDLI: Investigations of metamorphic (Al)GaInP for III

Content Provider	IEEE Xplore Digital Library
Author	Cardwell, D.W. Vaughn, N. Paul, P. Ratcliff, C. Chmielewski, D. Carnevale, S. Arehart, A. Grassman, T.J. Ringel, S.A.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA (Cardwell, D.W.; Vaughn, N.; Paul, P.; Ratcliff, C.; Chmielewski, D.; Carnevale, S.; Arehart, A.; Ringel, S.A.) \|\| Dept. of Mater. Sci. & Eng., Ohio State Univ., Columbus, OH, USA (Grassman, T.J.)
Abstract	We explore the lattice constant and Al content parameter space supporting (Al)GaInP materials with direct bandgaps >2.0 eV, to assess such materials for applications to future ≥4 junction multijunction photovoltaics. $(Al_{z}Ga_{1-z})_{x}In_{1-x}P$ test structures and prototype solar cells were grown by molecular beam epitaxy lattice-matched to either $GaAs_{y}P_{1-y}$ virtual substrates or GaAs substrates over a range of Al contents and lattice constants. We observe significant anneal-induced improvements in material quality and solar cell performance in all compositions considered. Comparing test structures and solar cells with ~2.0 to ~2.1 eV bandgaps suggests that (Al)GaInP compositions with tensile-misfit (vs. GaAs) show potential to outperform lattice-matched (Al)GaInP compositions with higher Al fractions in future multijunction cells requiring top cell bandgaps >2.0 eV.
Starting Page	1
Ending Page	4
File Size	724825
Page Count	4
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7356437
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Photovoltaic cells Annealing Gallium arsenide Prototypes Doping Molecular beam epitaxial growth annealing III–V semiconductor materials photovoltaic cells solar energy epitaxial layers wide band gap semiconductors
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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