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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nian Chen Ebong, A. |
| Copyright Year | 2015 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of North Carolina at Charlotte, Charlotte, NC, USA (Nian Chen; Ebong, A.) |
| Abstract | This paper reports on the modeled and experimental results of industrial aluminum back surface field (Al-BSF) silicon solar cells with different number of busbars (three-, four- and five) for cost-effective metallization. It is found that by keeping the same metal grid coverage, solar cells with four- and five-busbar designs give higher fill factor (FF) and conversion efficiency than the-state-of-the-art three-busbar. This is attributed to decreased gridline resistance as the number of busbars increases from three to four, and four to five. The experimental I-V data shows an increase in cell efficiency by $0.18%_{absolute}$ and $0.34%_{absolute}$ with four- and five-busbar cells, respectively, compared to the three-busbar counterpart. This suggests that four- and five-busbar designs having finer gridlines will lead to >20% Al-BSF cell. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 998440 |
| Page Count | 5 |
| File Format | |
| e-ISBN | 9781479979448 |
| DOI | 10.1109/PVSC.2015.7355751 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-14 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resistance Photovoltaic cells Metals Silicon Printing Electrodes Computer architecture silicon solar cell gridline busbar series resistance |
| Content Type | Text |
| Resource Type | Article |
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