NDLI: Current status at solar frontier: From fundamental research to industrial mass production of Cd-free Cu(In,Ga)(Se,S)2 solar cell

Content Provider	IEEE Xplore Digital Library
Author	Nakamura, M. Kato, T. Kamada, R. Sugimoto, H.
Copyright Year	2015
Description	Author affiliation: Technol. Dev. Div., Solar Frontier K.K., Atsugi, Japan (Nakamura, M.; Kato, T.; Kamada, R.; Sugimoto, H.)
Abstract	A conversion efficiency of 20.9% was achieved on $Cu(In,Ga)(Se,S)_{2}$ solar cell prepared through the sputtering-selenization/sulfurization process with Zn-based Cd-free buffer layer last year. In this paper, we will discuss the results of numerous analyses from the champion cell. The temperature and illumination dependences of Voc were measured to extract the Shockley-Read-Hall recombination rates at the buffer/absorber interface $(R^{i}),$ in the space charge region $(R^{d}),$ and in the quasi-neutral region $(R^{b})$ according to the method recently proposed by Li et al. [1]. The values of Ri, Rd, and Rb were deduced as $1.9×10^{15},$ $2.3×10^{17},$ and $1.1×10^{17}$ $cm^{-2}s^{-1},$ respectively. Comparing these values with those of the NREL's cell, our cell had similar Rb, better Ri , and worse Rd. A cross sectional image of the electron back scatter diffraction pattern revealed that smaller grains were segregated on the top of the absorber layer up to the depth of 200 nm. As the depth of the space charge region deduced from both the capacitance-voltage measurement and the combined scanning electron microscopy-electron beam induced current mapping was about 200 nm, the layer with small grains was expected to be the main cause of the inferior Rd. In addition to the longitudinal inhomogeneity of grain size, the electroluminescence imaging and the laser beam induced current mapping taken on the cell surface indicate that the lateral non-uniformity may also be deteriorating cell performance.
Starting Page	1
Ending Page	4
File Size	1025526
Page Count	4
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7355963
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Temperature measurement Space charge Measurement by laser beam Lighting Current measurement Radiative recombination Voc(G) copper indium gallium selenide (CIGS) EBSD recombination rate SEM-EBIC Solar Frontier Voc(T)
Content Type	Text
Resource Type	Article

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2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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