NDLI: Effects of back contact resistance, depletion width and relaxation time distributions in admittance spectroscopy of CZTSe devices

Content Provider	IEEE Xplore Digital Library
Author	Caruso, A.E. Pruzan, D.S. Lund, E.A. Scarpulla, M.A.
Copyright Year	2015
Description	Author affiliation: Mater. Sci. & Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA (Pruzan, D.S.) \|\| Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA (Caruso, A.E.; Lund, E.A.; Scarpulla, M.A.)
Abstract	We present an updated equivalent circuit model based in the physics of heterojunction devices and apply it in the interpretation of admittance spectroscopy from CZTSe photovoltaic devices. We investigate the effects of fundamental device parameters on capacitance-frequency profiles and show that the widely-used derivative analysis method is only accurate for secondary capacitance steps, which may not be easily distinguished from the main junction capacitance-frequency step. We investigate whether a distribution of depletion widths or other temperature dependencies in the capacitance can account for the behavior of the main capacitance step and find that only a strong temperature-dependent series resistance can explain the frequency shift of the main capacitance step. For the samples studied, this resistance appears to be non-monotonic. We discuss the validity of this result within a model of thermionic emission over a back contact having a distribution of barrier heights.
Starting Page	1
Ending Page	5
File Size	889121
Page Count	5
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7356015
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Capacitance Integrated circuit modeling Temperature dependence Equivalent circuits Admittance capacitance methods admittance spectroscopy CZTS CZTSe equivalent circuit
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Temperature dependence of equivalent circuit parameters used to analyze admittance spectroscopy and application to CZTSe devices

Role of high series resistance in admittance spectroscopy of kesterite solar cells

Temperature effects on crosstalk in carbon nanotube interconnects

Brune's multiport lumped element equivalent circuits in admittance representation

Modeling of NQS effects in carbon nanotube transistors

A new FDTD thin-slot equivalent circuit algorithm

Electrothermal simulation methodology for power devices and integrated circuits

Logic Analysis of High-speed MOBILE Circuit

High frequency lumped element models for substrate noise coupling

Effects of back contact resistance, depletion width and relaxation time distributions in admittance spectroscopy of CZTSe devices

Similar Documents

Temperature dependence of equivalent circuit parameters used to analyze admittance spectroscopy and application to CZTSe devices

Role of high series resistance in admittance spectroscopy of kesterite solar cells

Temperature effects on crosstalk in carbon nanotube interconnects

Brune's multiport lumped element equivalent circuits in admittance representation

Modeling of NQS effects in carbon nanotube transistors

A new FDTD thin-slot equivalent circuit algorithm

Electrothermal simulation methodology for power devices and integrated circuits

Logic Analysis of High-speed MOBILE Circuit

High frequency lumped element models for substrate noise coupling

Effects of back contact resistance, depletion width and relaxation time distributions in admittance spectroscopy of CZTSe devices