NDLI: Quantitative determination of grain boundary recombination velocity in CdTe by combination of cathodoluminescence measurements and numerical simulations

Content Provider	IEEE Xplore Digital Library
Author	Kanevce, A. Moseley, J. Kuciauskas, D. Al-Jassim, M. Metzger, W.K.
Copyright Year	2015
Description	Author affiliation: Nat. Renewable Energy Lab., Golden, CO, USA (Kanevce, A.; Moseley, J.; Kuciauskas, D.; Al-Jassim, M.; Metzger, W.K.)
Abstract	We developed a 2D numerical model simulating cathodoluminescence (CL) measurements in CdTe. Using this model we analyze how various material parameters impact the CL contrast and intensity observed in the measured signal, and determine if and when we can accurately determine the value of grain boundary recombination rate. In addition to grain boundary (GB) recombination, the grain size and its ratio to the carrier diffusion length impact the results of the measurement. Holding the grain interior and GB recombination rates constant, we find that as the grain size increases and becomes larger than the diffusion length, the observed CL contrast is larger. In a small grain size material the surface recombination lowers the overall intensity of the signal, but does not impact the observed contrast significantly. In a large grain size material, high surface recombination velocity can lower the observed contrast in a measurement. This model in combination with an experiment is used to quantify the grain boundary recombination velocity in polycrystalline CdTe before and after the $CdCl_{2}$ treatment.
Starting Page	1
Ending Page	4
File Size	924412
Page Count	4
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7355654
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chlorine Grain size II-VI semiconductor materials Cadmium compounds Surface treatment Numerical models Government numerical simulations CdTe grain boundaries cathodoluminescence
Content Type	Text
Resource Type	Article

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