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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shih-Li Lin Hung-Ruei Tseng Shun-Chieh Hsu Yin-Han Chen Chien-Chung Lin |
| Copyright Year | 2015 |
| Description | Author affiliation: Inst. of Photonic Syst., Nat. Chiao-Tung Univ., Tainan, Taiwan (Hung-Ruei Tseng; Shun-Chieh Hsu; Chien-Chung Lin) || Inst. of Lighting & Energy Photonics, Nat. Chiao-Tung Univ., Tainan, Taiwan (Shih-Li Lin; Yin-Han Chen) |
| Abstract | A numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1008432 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9781479979448 |
| DOI | 10.1109/PVSC.2015.7356113 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-14 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Radiative recombination Metals Gallium arsenide Numerical models Photovoltaic cells Silicon Electric potential Gallium Arsenide Numerical method Photovoltaic Devices Surface Recombination Velocity Fermi-Level Pinning Metal-Semiconductor Contact |
| Content Type | Text |
| Resource Type | Article |
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