NDLI: >20% efficient 80 µm thin industrial-type large-area solar cells from 100 µm Sawn c-Si Wafers

Content Provider	IEEE Xplore Digital Library
Author	Schiele, Y. Brinkmann, N. Ebser, J. Horbelt, R. Frey, A. Engelhardt, J. Hahn, G. Terheiden, B.
Copyright Year	2015
Description	Author affiliation: Dept. of Phys., Univ. of Konstanz, Konstanz, Germany (Schiele, Y.; Brinkmann, N.; Ebser, J.; Horbelt, R.; Frey, A.; Engelhardt, J.; Hahn, G.; Terheiden, B.)
Abstract	Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn enables a higher efficiency potential and a larger spread of Si materials to be employed for rear junction solar cell concepts which are advantageous for n-type devices. Industrial-type 80 μm thin large-area rear junction solar cells manufactured from 100 μm wire-sawn wafers exhibit an independently certified efficiency of 20.1% with $V_{OC}$ of 672 mV.
Starting Page	1
Ending Page	6
File Size	681910
Page Count	6
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7356220
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicon Junctions Passivation Conductivity Current density Thyristors thin wafers boron n-type photovoltaic cells selective silicon
Content Type	Text
Resource Type	Article

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