NDLI: State-of-the-art multiparameter characterization of the chemical and field effect passivation of very high lifetime n-Si with n+ front surface field (FSF)

Content Provider	IEEE Xplore Digital Library
Author	Wilson, M. Findlay, A. D'Amico, J. Savtchouk, A. Lagowski, J.
Copyright Year	2015
Description	Author affiliation: Semilab SDI LLC, Tampa, FL, USA (Wilson, M.; Findlay, A.; D'Amico, J.; Savtchouk, A.; Lagowski, J.)
Abstract	An effective characterization approach for $n^{+}$ front surface field (FSF) passivation has been developed using a sequence of state-of-the-art “corona charge-Kelvin” electrical methods integrated with lifetime based monitoring using QSS-μPCD with a decay control method. The approach was applied to symmetrical test structures on high lifetime n-Si with $n^{+}$ FSF typically used in high efficiency IBC cells. Test structures with similar $SiN_{x}-based$ top dielectric included structures with and without $n^{+}$ FSF. Structures without the FSF enabled complete dielectric and interfacial charge characterization. The $D_{it}$ spectra revealed very low interface trap density with midgap values about 3e10 $q/cm^{2}eV.$ This $D_{it}$ implies excellent chemical passivation. In addition, classical field-effect response of the effective carrier lifetime vs. corona charge showed a lifetime minimum near zero charge (corresponding to a maximum surface recombination velocity) and an increase of lifetime in inversion and accumulation for the structure without $n^{+}$ FSF. For $n^{+}$ FSF structures lifetimes higher than that for undoped structures were measured. The 12ms maximum effective lifetime measured for the $n^{+}$ FSF structure with QSS-μPCD indicates maximum effective surface recombination around 0.5 cm/s, while for the structure without $n^{+}$ FSF the maximum effective lifetime was about 1.7ms. For the $n^{+}$ FSF structure, the field-effect characteristics of $τ_{eff}$ demonstrated very high lifetime for zero charge and for positive corona charge. The overall results indicate that excellent $n^{+}$ FSF passivation is a consequence of three elements: 1. good chemical passivation 2. good surface field passivation and 3. close to optimal dielectric charge controlled field-effect passivation. The surface saturation current measurements revealed $J_{0}$ = $5.1fA/cm^{2}$ that would correspond to $V_{OC}$ ~ 751mV, consistent with cell results reported for advanced IBC cells. Whole wafer mapping showed good $n^{+}$ FSF passivation uniformity with $J_{0}$ from 5 to $7fA/cm^{2}$ in 95% of the wafer. The present metrology approach required important technology refinements that are now being introduced in PV2000A tools developed by Semilab SDI.
Starting Page	1
Ending Page	5
File Size	2001435
Page Count	5
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7356031
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics Steady-state Yttrium Corona Photovoltaic systems SiN corona dielectric FSF high lifetime non-contact n-type
Content Type	Text
Resource Type	Article

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