NDLI: Diode laser annealing of CZTS thin film solar cells

Content Provider	IEEE Xplore Digital Library
Author	Ahmmed, M.S. Xiaojing Hao Jongsung Park Hawkes, E.R. Green, M.A.
Copyright Year	2015
Description	Author affiliation: Sch. of Photovoltaic & Renewable Energy Eng., UNSW Australia, Sydney, NSW, Australia (Xiaojing Hao; Jongsung Park; Green, M.A.) \|\| Sch. of Mech. & Manuf. Eng., UNSW Australia, Sydney, NSW, Australia (Ahmmed, M.S.; Hawkes, E.R.)
Abstract	Continuous wave (CW) diode laser processing, in the form of millisecond annealing, is an interesting option for thermal treatment of the thin films. The localised nature of laser processing gives an opportunity to heat the film to a higher temperature over a much shorter time than rapid thermal annealing (RTA), while allowing the substrate to remain at low temperature with a low ramp-up rate. As a result, the chance of substrate damage and delamination between the interfaces are significantly reduced. Here, numerical simulation of the CW diode laser annealing of copper zinc tin sulfide (CZTS) thin film deposited on molybdenum (Mo) coated soda lime glass (SLG) substrate is carried out to reveal the thermal behaviour. The numerical simulations are performed using the open source C++ solver known as OpenFOAM [1]. A number of simulations has been conducted to investigate the influence of key laser annealing parameters on the spatial and temporal temperature distributions of the CZTS/Mo/glass structure. Our simulation results show that, CZTS and Mo are practically isothermal during the annealing process, and a sharp temperature gradient can be observed within the glass substrate. This sharp temperature gradient, which may lead to a delamination between the interfaces, can be reduced by using background substrate heating along with a slow laser beam scanning speed. Additionally, the controlled heating and cooling rate can be observed with the slow laser beam scanning speeds.
Starting Page	1
Ending Page	5
File Size	840663
Page Count	5
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7355800
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Heating Glass Annealing Diode lasers Laser beams Temperature distribution 808nm CZTS thin film laser annealing OpenFOAM CW
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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