NDLI: Design principles of nanostructured window solar cells

Content Provider	IEEE Xplore Digital Library
Author	Yusi Chen Yangsen Kang Dong Liang Jieyang Jia Li Zhao Yijie Huo Harris, J.
Copyright Year	2015
Description	Author affiliation: Dept. of Phys., Stanford Univ., Stanford, CA, USA (Dong Liang) \|\| Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA (Li Zhao) \|\| Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA (Yusi Chen; Yangsen Kang; Jieyang Jia; Yijie Huo; Harris, J.)
Abstract	Nanostructures in III-V solar cells have been widely investigated. Due to the enhancement in photon absorption, higher short-circuit current has been achieved in a number of previous reports. However, many of the nanostructured solar cells suffer from low open circuit voltage and low fill factor, which result from poor junction quality and high non-radiative recombination. Such problems can be resolved by utilizing both a nanostructured III-V window layer and planar p-n junction. In this work, we demonstrate the design and optimization of nanostructured window solar cells through a set of carefully designed experiments. A systematic study based on device fabrication, characterization and simulation is presented. This work shows that reducing absorption and minority carrier loss inside the nanostructured window are key to further improve the performance of nanostructured window solar cells.
Starting Page	1
Ending Page	4
File Size	1220367
Page Count	4
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7356351
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nanostructures Photovoltaic cells Gallium arsenide Absorption Photonic band gap Photonics Metals photovoltaics III–V materials GaAs nanostructure window layer antireflection solar cell
Content Type	Text
Resource Type	Article

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