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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cuevas, A. Samundsett, C. Kerr, M.J. Macdonald, D.H. Mackel, H. Altermatt, P.P. |
| Copyright Year | 2003 |
| Description | Author affiliation: Fac. of Eng. & IT, Australian Nat. Univ., Canberra, ACT, Australia (Cuevas, A.; Samundsett, C.; Kerr, M.J.; Macdonald, D.H.; Mackel, H.; Altermatt, P.P.) |
| Abstract | The high lifetimes recently measured for n-type multicrystalline and CZ silicon make innovative solar cells possible. This paper presents back junction solar cells made on n-type silicon, including a variety of simple designs based on the use of aluminum to form the pn junction, either with uniform or localized p/sup +/ regions. The feasibility of n/sup +/np/sup +/ continuous junction cast multicrystalline Si cells is demonstrated with a 15% efficiency back junction device (J/sub sc/=33.3 mAcm/sup -2/,V/sub oc/=580 mV, FF=0.776, 4 cm/sup 2/, 180 /spl mu/m thickness). Voltages up to 594 mV have been measured on some mc-Si devices. Using n-type CZ silicon, a 15.8% efficiency has been obtained (J/sub sc/=33 mAcm/sup -2/, V/sub oc/=600 mV, FF=0.8). Localized rear Al junction devices on n-type FZ silicon have reached V/sub oc/=645 mV and J/sub sc/=27 mAcm/sup -2/ (no AR coating), showing the way for improved performance. |
| Starting Page | 963 |
| Ending Page | 966 |
| File Size | 302876 |
| Page Count | 4 |
| File Format | |
| ISBN | 4990181603 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-05-11 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | PVSEC Advisory Committee |
| Subject Keyword | Photovoltaic cells Silicon Boron Aluminum Artificial intelligence Fabrication Conductivity Australia Voltage Coatings |
| Content Type | Text |
| Resource Type | Article |
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