NDLI: Development of coaxial shield via in silicon carrier for high frequency application

Content Provider	IEEE Xplore Digital Library
Author	Soon Wee Ho Rao, Vempati Srinivasa Khan, Qratti Kalandar Navas Seung Uk Yoon Kripesh, V.
Copyright Year	2006
Description	Author affiliation: Inst. of Microelectron., Singapore (Soon Wee Ho; Vempati Srinivasa Rao; Qratti Kalandar Navas Khan; Seung Uk Yoon; Kripesh, V.)
Abstract	System-in-package (SiP) based on silicon carriers is a fast emerging technology that offers system design flexibility and integration of heterogeneous technologies. One of the key technologies enabler for silicon carrier is through wafer interconnects. The development of SiP will require the devices with different functionality operating at high frequency to be densely packed on the silicon substrate. However, silicon substrate is usually of low resistivity, when a high frequency signal is transmitted vertically through the substrate via, significant signal attenuation can occur that leads to substrate crosstalk and poor RF performance. In this paper, a novel coaxial shielded via in silicon carrier is presented for high frequency applications. Electrical modeling was carried out to obtain the required geometries for optimum performance. The coaxial shield via is able to suppress undesirable substrate crosstalk between vertical interconnects as well as provide excellent RF performance. The detailed fabrication process is also presented. A negative tone SU-8 photoresist is used as the dielectric for the coaxial shield via structure. A test vehicle is fabricated on 8-inch, 10 Omegamiddotcm resistivity silicon wafer with a target of achieving a transmission coefficient, $S_{21}$ of greater than -0.5 dB at 40 GHz. SU-8 dielectric of approximately 112 mum thickness was deposited on the via sidewall of a 300 mum diameter through wafer via holes, and the via-holes filled with copper using bottom up electroplating approach to achieve a radius ratio, n of 4
Starting Page	825
Ending Page	830
File Size	525334
Page Count	6
File Format	PDF
ISBN	1424406641
DOI	10.1109/EPTC.2006.342819
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-12-06
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Coaxial components Silicon Conductivity RF signals Crosstalk Radio frequency Dielectric substrates Attenuation Solid modeling Geometry
Content Type	Text
Resource Type	Article

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