NDLI: Bias Temperature Instability analysis of FinFET based SRAM cells

Content Provider	IEEE Xplore Digital Library
Author	Khan, S. Agbo, I. Hamdioui, S. Kukner, H. Kaczer, B. Raghavan, P. Catthoor, F.
Copyright Year	2014
Description	Author affiliation: Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands (Khan, S.; Agbo, I.; Hamdioui, S.) \|\| imec vzw., Leuven, Belgium (Kukner, H.; Kaczer, B.; Raghavan, P.; Catthoor, F.)
Abstract	Bias Temperature Instability (BTI) is posing a major reliability challenge for today's and future semiconductor devices as it degrades their performance. This paper provides a comprehensive BTI impact analysis, in terms of time-dependent degradation, of FinFET based SRAM cell. The evaluation metrics are read Static Noise Margin (SNM), hold SNM and Write Trip Point (WTP); while the aspects investigated include BTI impact dependence on the supply voltage, cell strength, and design styles (6 versus 8 Transistors cell). A comparison between FinFET and planar CMOS based SRAM cells degradation is also covered. The simulation performed on FinFET based cells for $10^{8}$ seconds of operation under nominal $V_{dd}$ show that Read SNM degradation is 16.72%, which is 1.17× faster than hold SNM, while WTP improves by 6.82%. In addition, a supply voltage increment of 25% reduces the Read SNM degradation by 40%, while strengthening the cell pull-down transistors by 1.5× reduces the degradation by only 22%. Moreover, the results reveal that 8T cell degrades 1.31× faster than 6T cell, and that FinFET cells are more vulnerable (~2×) to BTI degradation than planar CMOS cells.
Starting Page	1
Ending Page	6
File Size	567844
Page Count	6
File Format	PDF
ISBN	9783981537024
DOI	10.7873/DATE.2014.044
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-03-24
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	European Design Automation Association (EDAA)
Subject Keyword	Degradation SRAM cells FinFETs Computer architecture Microprocessors Stability metrics BTI NBTI PBTI SRAM cell
Content Type	Text
Resource Type	Article

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