NDLI: NBTI/PBTI-Aware WWL Voltage Control for Half-Selected Cell Stability Improvement

Content Provider	IEEE Xplore Digital Library
Author	Chuan Zhao Lee Kam Chew Leong Zhi Hui Kong Kim, T.T.-H.
Copyright Year	2004
Abstract	This brief presents a negative bias temperature instability (BTI)/positive BTI-aware write-wordline (WWL) voltage control technique for improving degraded cell stability of half-selected cells without extra power consumption. After BTI aging, the proposed lowering WWL voltage recovers the degraded cell stability without scarifying the write margin. Finally, we also present a sample circuit implementation of the proposed WWL voltage control scheme.
Sponsorship	IEEE Circuits and Systems Society
Starting Page	602
Ending Page	606
Page Count	5
File Size	1255844
File Format	PDF
ISSN	15497747
Volume Number	60
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuit stability Voltage control Stress Stability analysis Degradation SRAM cells positive bias temperature instability (PBTI) Half-selected static noise margin (HS-SNM) negative bias temperature instability (NBTI)
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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NBTI/PBTI-Aware WWL Voltage Control for Half-Selected Cell Stability Improvement