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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Guangshan Duan Shuai Wang |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. of Comput. Sci. & Technol., Nanjing Univ., Nanjing, China (Guangshan Duan; Shuai Wang) |
| Abstract | Due to the high cell density, low leakage power consumption, and less vulnerability to soft errors, non-volatile memory technologies are among the most promising alternatives for replacing the traditional DRAM and SRAM technologies used in implementing main memory and caches in the modern microprocessor. However, one of the difficulties is the limited write endurance of most non-volatile memory technologies. In this paper, we propose to exploit the narrow-width values to improve the lifetime of non-volatile last level caches. Leading zeros masking scheme is first proposed to reduce the write stress to the upper half of the narrow-width data. To balance the write variations between the upper half and the lower half of the narrow-width data, two swap schemes, the swap on write (SW) and swap on replacement (SRepl), are proposed. To further reduce the write stress to non-volatile caches, we adopt two optimization schemes, the multiple dirty bit (MDB) and read before write (RBW), to improve their lifetime. Our experimental results show that by combining all our proposed schemes, the lifetime of non-volatile caches can be improved by 245% on average. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 153305 |
| Page Count | 4 |
| File Format | |
| ISBN | 9783981537024 |
| DOI | 10.7873/DATE.2014.065 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-03-24 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | European Design Automation Association (EDAA) |
| Subject Keyword | Nonvolatile memory Random access memory System-on-chip Stress Optimization Computer architecture Microprocessors |
| Content Type | Text |
| Resource Type | Article |
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