Please wait, while we are loading the content...
Please wait, while we are loading the content...
Content Provider | IEEE Xplore Digital Library |
---|---|
Author | Cai, Yu Haratsch, Erich F. Mutlu, Onur Mai, Ken |
Copyright Year | 2013 |
Description | Author affiliation: DSSC, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, USA (Cai, Yu; Mutlu, Onur; Mai, Ken) || LSI Corporation, 1110 American Parkway NE, Allentown, PA, USA (Haratsch, Erich F.) |
Abstract | With continued scaling of NAND flash memory process technology and multiple bits programmed per cell, NAND flash reliability and endurance are degrading. Understanding, characterizing, and modeling the distribution of the threshold voltages across different cells in a modern multi-level cell (MLC) flash memory can enable the design of more effective and efficient error correction mechanisms to combat this degradation. We show the first published experimental measurement-based characterization of the threshold voltage distribution of flash memory. To accomplish this, we develop a testing infrastructure that uses the read retry feature present in some 2Y-nm (i.e., 20–24nm) flash chips. We devise a model of the threshold voltage distributions taking into account program/erase (P/E) cycle effects, analyze the noise in the distributions, and evaluate the accuracy of our model. A key result is that the threshold voltage distribution can be modeled, with more than 95% accuracy, as a Gaussian distribution with additive white noise, which shifts to the right and widens as P/E cycles increase. The novel characterization and models provided in this paper can enable the design of more effective error tolerance mechanisms for future flash memories. |
Starting Page | 1285 |
Ending Page | 1290 |
File Size | 900096 |
Page Count | 6 |
File Format | |
ISBN | 9781467350716 |
ISSN | 15301591 |
e-ISBN | 9783981537000 |
DOI | 10.7873/DATE.2013.266 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2013-03-18 |
Publisher Place | France |
Access Restriction | Subscribed |
Rights Holder | European Design Automation Association (EDAA) |
Subject Keyword | Threshold voltage Noise Flash memory cells Correlation Kernel Vectors Read Retry NAND Flash Memory Reliability Memory Signal Processing Threshold Voltage Distribution |
Content Type | Text |
Resource Type | Article |
National Digital Library of India (NDLI) is a virtual repository of learning resources which is not just a repository with search/browse facilities but provides a host of services for the learner community. It is sponsored and mentored by Ministry of Education, Government of India, through its National Mission on Education through Information and Communication Technology (NMEICT). Filtered and federated searching is employed to facilitate focused searching so that learners can find the right resource with least effort and in minimum time. NDLI provides user group-specific services such as Examination Preparatory for School and College students and job aspirants. Services for Researchers and general learners are also provided. NDLI is designed to hold content of any language and provides interface support for 10 most widely used Indian languages. It is built to provide support for all academic levels including researchers and life-long learners, all disciplines, all popular forms of access devices and differently-abled learners. It is designed to enable people to learn and prepare from best practices from all over the world and to facilitate researchers to perform inter-linked exploration from multiple sources. It is developed, operated and maintained from Indian Institute of Technology Kharagpur.
Learn more about this project from here.
NDLI is a conglomeration of freely available or institutionally contributed or donated or publisher managed contents. Almost all these contents are hosted and accessed from respective sources. The responsibility for authenticity, relevance, completeness, accuracy, reliability and suitability of these contents rests with the respective organization and NDLI has no responsibility or liability for these. Every effort is made to keep the NDLI portal up and running smoothly unless there are some unavoidable technical issues.
Ministry of Education, through its National Mission on Education through Information and Communication Technology (NMEICT), has sponsored and funded the National Digital Library of India (NDLI) project.
Sl. | Authority | Responsibilities | Communication Details |
---|---|---|---|
1 | Ministry of Education (GoI), Department of Higher Education |
Sanctioning Authority | https://www.education.gov.in/ict-initiatives |
2 | Indian Institute of Technology Kharagpur | Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project | https://www.iitkgp.ac.in |
3 | National Digital Library of India Office, Indian Institute of Technology Kharagpur | The administrative and infrastructural headquarters of the project | Dr. B. Sutradhar bsutra@ndl.gov.in |
4 | Project PI / Joint PI | Principal Investigator and Joint Principal Investigators of the project |
Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon |
5 | Website/Portal (Helpdesk) | Queries regarding NDLI and its services | support@ndl.gov.in |
6 | Contents and Copyright Issues | Queries related to content curation and copyright issues | content@ndl.gov.in |
7 | National Digital Library of India Club (NDLI Club) | Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach | clubsupport@ndl.gov.in |
8 | Digital Preservation Centre (DPC) | Assistance with digitizing and archiving copyright-free printed books | dpc@ndl.gov.in |
9 | IDR Setup or Support | Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops | idr@ndl.gov.in |
Loading...
|