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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shih, H.-C. Wu, C.-W. |
| Copyright Year | 2013 |
| Description | Author affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan (Shih, H.-C.; Wu, C.-W.) |
| Abstract | Die stacking based on Through-Silicon Via (TSV) is considered as an efficient way to reducing power consumption and form factor. In the current stage, the failure rate of TSV is still high, so some type of defect tolerance scheme is required. Meanwhile, the concept of double-via, which is normally used in traditional layer to layer interconnection, can be one of the feasible tolerance schemes. Double-via/TSV has a benefit compared to TSV repair: it can eliminate the fuse configuration procedure as well as the fuse layer. However, double-TSV has a problem of signal degradation and leakage caused by short defects. In this work, an enhanced scheme for double-TSV is proposed to solve the short-defect problem through signal path division and VDD isolation. Result shows that the enhanced double-TSV can tolerate both open and short defects, with reasonable area and timing overhead. |
| Starting Page | 1486 |
| Ending Page | 1489 |
| File Size | 224069 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467350716 |
| ISSN | 15301591 |
| e-ISBN | 9783981537000 |
| DOI | 10.7873/DATE.2013.302 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-03-18 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | European Design Automation Association (EDAA) |
| Subject Keyword | Through-silicon vias Stacking Maintenance engineering Three-dimensional displays Fuses Switches Integrated circuit modeling yield improvement TSV 3D-IC open-defect short-defect defect tolerance |
| Content Type | Text |
| Resource Type | Article |
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