NDLI: Wafer level fabrication of high performance MEMS using bonded and thinned bulk piezoelectric substrates

Content Provider	IEEE Xplore Digital Library
Author	Aktakka, E.E. Kim, H. Najafi, K.
Copyright Year	2009
Description	Author affiliation: Center for Wireless Integrated Microsystems (WIMS), University of Michigan, Ann Arbor, USA (Aktakka, E.E.; Kim, H.; Najafi, K.)
Abstract	We report a batch-mode fabrication technology for integration of bulk piezoelectric materials into MEMS devices, and test results of high-performance out-of-plane piezoelectric actuators fabricated with this technology. Low-temperature (200°C), reliable AuIn and Parylene bonding of PZT wafers/dies on Si wafers is achieved, and lapping is used to obtain ≪10µm PZT films. Conservation of the piezoelectric properties is confirmed with a hysteresis measurement. Additionally, square and circular shaped PZT diaphragms with 4mm×4mm, 2mm×2mm, and 1mm×1mm sizes operating in the d31-mode are fabricated with a 2-mask fabrication process. Greater than 12µm peak-to-peak deflection is obtained by actuation of a $1mm^{2}$ diaphragm at resonance (110.9kHz) with a power consumption of ≪7mW.
Starting Page	849
Ending Page	852
File Size	2174192
Page Count	4
File Format	PDF
ISBN	9781424441907
e-ISBN	9781424441938
DOI	10.1109/SENSOR.2009.5285795
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Micromechanical devices Wafer bonding Piezoelectric materials Microelectromechanical devices Materials testing Piezoelectric actuators Lapping Piezoelectric films Semiconductor films PZT Piezoelectric Solder bonding Parylene bonding Actuators Sensors
Content Type	Text
Resource Type	Article

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