NDLI: Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with $P^{+}Ion$ Implantation

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MUGFET - alternative transistor architecture for 32 nm CMOS generation

China for Semiconductor Equipment Supplier

Recent Development of Semiconductor Technology in China

45nm Node p+ USJ Formation With High Dopant Activation And Low Damage

Shallow junctions in silicon via low thermal budget processing

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Precision Implant Requirements for SDE Junction Formation in sub-65 nm CMOS Devices

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Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

Maximizing Boron Activation in Solid Phase Epitaxy — A Case of Implant Choice and RTP Processing

Self-Amorphizing Gas Cluster Ion Beam Technology and Combination with Laser Spike Anneal for Highly Scaled Source Drain Junction

Characteristics of ultrashallow $p^{+}/n$ junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

Modeling and Simulation of Fluorine Related Diffusion in Silicon

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Physical Model for Surface Annihilation of Silicon Interstitials during Annealing

Junction Specifications for the 45nm Node

Device Performance Evaluation of PMOS Devices Fabricated by B2H6PIII/PLAD Process on Poly-Si Gate Doping

FINFET Device Junction Formation Challenges

The junction challenges in the FinFETs device

Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices

Advantageous Decaborane Ion Implantation for Ultra-shallow Junction of PMOSFETs Compared with Boron Monomer Implantation into Germanium Preamorphized Layer

Feasibility Study of Solid-phase Epitaxial Regrowth (SPER) as an Ultra-shallow Junction (USJ) Technology for High-performance CMOS Devices

Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors: Metrology, Dopant Loss, and Novel Electrostatic Junction

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Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal

Reproducible and High-Resolution Analysis on Ultra-Shallow-Junction CMOSFETs by Scanning Spreading Resistance Microscopy

Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

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Tuning of Schottky barrier heights by silicidation induced impurity segregation

Integration and Performance of Schottky Junction SOI Devices

Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

Material and Electrical Characterization of Ni- and Pt-Germanides for p-channel Germanium Schottky Source/Drain Transistors

Improvement of thermal stability of nickel silicide using N2ion implantation prior to nickel film deposition

A Study of Nickel Silicide Formed on SOI Substrate with Different Ni/Co Thicknesses for Nano-scale CMOSFET

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Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2

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Layer Transfer for SOI Structures Using Plasma Hydrogenation

Investigation of Relaxed SiGe on Insulator and Strained Si

Thermal Stability and Electrical Properties of High-k Gate Dielectric Materials

Advanced Modeling and Simulation for Microelectronic Materials

Properties of Si/SiO2Interfaces in Vertical Trench MOSFETs

Elimination of Floating body Effect and Thermal Instability in a Nano Quasi-SOI MOSFET with π-shaped Semiconductor Layer

Bias Dependence of Partially-Depleted SOI Transistor to Total Dose Irradiation

Self-Assembled Si-Ge Nanorings with Size and Composition-Control

Model Parameters Extraction of SOI MOSFETs

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Current-Voltage Characteristics and Charge-Carrier Traps in N-Type 4H-SiC Schottky Structures

Study of electron transfer in metal-alkanethiol SAM-metal junctions

On the Surface Sulfidation of AlGaN/GaN Schottky Contacts

Effect of Rapid Thermal Annealing on Ti/Al/Ni/Au Ohmic Contact to n-Al0.45Ga0.55N

Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with $P^{+}Ion$ Implantation

A CAD Oriented 4H-SiC MESFET Quasi-analytical Large-signal Drain Current Model

Spin-polarized injection through the n-magnetic/p-nonmagnetic semiconductor heterojunction

Improving the Luminous Efficiency of Organic Light Emitting Diodes using a Modulated Doping Hole Injection Layer

High-Performance InGaP/GaAs pnp δ-Doped Heterojunction Bipolar Transistor

The Characteristics of Functional Phototransistors

Fabrication and Performance of GaAs Double Camel-Like Gate FET with Extremely High Gate Turn-on Voltage

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Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

RBS characterization on the PtSi-based ohmic contacts with n-InP

Extended Abstracts of the Fifth International Workshop on Junction Technology

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)

Extended Abstracts of the First International Workshop on Junction Technology (IEEE Cat. No.00EX464)

Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with $P^{+}Ion$ Implantation

Content Provider	IEEE Xplore Digital Library
Author	Hui Guo Yimen Zhang Yuming Zhang
Copyright Year	2006
Description	Author affiliation: Microelectron. Sch., Xidian Univ., Xi'an (Hui Guo; Yimen Zhang; Yuming Zhang)
Abstract	The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by $P^{+}$ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance $rho_{c}$ as low as 8.64 times $10^{-6}$ Omegacm2 is achieved after annealing in $N_{2}$ for 5 min at 900degC. The result for sheet resistance $R_{sh}$ of the implanted layers is 975 Omega/square. The low resistance contact would be attributed to the formation of $Ti_{3}SiC_{2}$ at the metal/n-SiC interface after thermal annealing
Starting Page	265
Ending Page	267
File Size	2629027
Page Count	3
File Format	PDF
ISBN	1424400473
DOI	10.1109/IWJT.2006.220907
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Ohmic contacts Ion implantation Silicon carbide Contact resistance Annealing Gold Thermal resistance Photonic band gap Thermal conductivity
Content Type	Text
Resource Type	Article

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