NDLI: Structure Optimization of Field-Plate AlGaN/GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Luo Weijun Wei Ke Chen Xiaojuan Li Chengzhan Liu Xinyu Wang Xiaoliang
Copyright Year	2006
Description	Author affiliation: Inst. of Semicond., Chinese Acad. of Sci., Beijing (Luo Weijun)
Abstract	AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC with varying field-plate length and gate-drain spacing were fabricated and analyzed. The classical small signal FET model and the well-known ColdFET method were used to extract the small signal parameters of the devices. Though the devices with field-plates exhibited lower better f $_{T}$ characteristic, they did demonstrate better $f_{max},$ MSG and power density performances than the conventional devices without field-plate. Besides, no independence of DC characteristic on field-plate length was observed. With the increase of the field-plate length and the gate-drain spacing, the characteristic of $f_{T}$ and $f_{max}$ degraded due to the large parasitic effects. Loadpull method was used to measure the microwave power performance of the devices. Under the condition of continuous wave at 5.4GHz, an output power density of 4.69W/mm was obtained for device with field-plate length of 0.5mum and gate-drain length of 2mum
Starting Page	926
Ending Page	928
File Size	86654
Page Count	3
File Format	PDF
ISBN	1424401607
DOI	10.1109/ICSICT.2006.306596
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs MODFETs FETs Degradation Power measurement Microwave measurements Microwave devices Microwave theory and techniques
Content Type	Text
Resource Type	Article

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