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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wenwei Yang Zhiping Yu Lilin Tian |
| Copyright Year | 2006 |
| Description | Author affiliation: Inst. of Microelectron., Tsinghua Univ., Beijing (Wenwei Yang; Zhiping Yu; Lilin Tian) |
| Abstract | In this work, the dominant quantum effects in nano devices are investigated by the full quantum simulation based on the QDAME algorithm, which is suitable to analyze the quantum open system. Compared with the classical drift-diffusion mechanism, the full quantum simulation predicts that due to the carrier tunneling from source to drain in off-state, the control of source/drain (S/D) lateral diffusion becomes more crucial in nano devices to suppress the short-channel-effects (SCEs) and reduce the off-state leakage current. Considering the induced S/D-gate capacitance, a practical method is also proposed to optimize the lateral diffusion length |
| Starting Page | 1364 |
| Ending Page | 1366 |
| File Size | 97014 |
| Page Count | 3 |
| File Format | |
| ISBN | 1424401607 |
| DOI | 10.1109/ICSICT.2006.306184 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-10-23 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Quantum mechanics Doping Algorithm design and analysis Predictive models Tunneling Leakage current Optimization methods MOSFETs Electric variables Particle scattering |
| Content Type | Text |
| Resource Type | Article |
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