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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Qian Luo Jiangfeng Du Mohua Yang Shenghui Lu Wei Zhou Jianxin Xia Qi Yu |
| Copyright Year | 2006 |
| Description | Author affiliation: Sch. of Microelectron. & Solid-state Electron., China Univ. of Electron. Sci. & Technol., Chengdu (Qian Luo; Jiangfeng Du; Mohua Yang; Shenghui Lu; Wei Zhou; Jianxin Xia; Qi Yu) |
| Abstract | A new measurement method was confirmed that it was available to investigate the current collapse in AlGaN/GaN HEMT due to the surface trapping process of electrons. A characteristic time constant of the trapping process $t_{p}$ $^{0}$ was defined and obtained to be about 0.38s in a specially designed HEMT by this method. We observed an abnormal trapping time resulting from the transport of the trapped electrons and demonstrated that there was a dynamic equilibrious distribution of the charged surface states when the bias stress is applied longer than $t_{p}$ $^{0}$ |
| Starting Page | 923 |
| Ending Page | 925 |
| File Size | 99171 |
| Page Count | 3 |
| File Format | |
| ISBN | 1424401607 |
| DOI | 10.1109/ICSICT.2006.306595 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-10-23 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Surface charging Aluminum gallium nitride Gallium nitride HEMTs Electron traps Stress Surface resistance Pulse measurements Electrical resistance measurement Current measurement |
| Content Type | Text |
| Resource Type | Article |
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