NDLI: Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Content Provider	IEEE Xplore Digital Library
Author	Xie, G. Xu, E. Lee, J. Hashemi, N. Ng, W.T. Zhang, B. Fu, F.Y.
Copyright Year	2012
Description	Author affiliation: Crosslight software Inc., Burnaby, BC, Canada (Fu, F.Y.) \|\| University of Toronto, The Edward S. Rogers Sr., Department of Electrical and Computer Engineering, Ontario, Canada (Xie, G.; Xu, E.; Lee, J.; Hashemi, N.; Ng, W.T.) \|\| University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, Sichuan, China (Zhang, B.)
Abstract	An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected Air-bridge Field Plate (AFP) is simulated, optimized and experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between gate and drain. The fabrication process is based on a commercially available RF GaN on SiC technology. Device characteristics for this work were optimized via layout changes only. An extensive analysis on the surface electrical field distribution was used to study the effect of varying AFP dimension. Simulation results indicated a breakdown voltage of 425 V for the AFP device can be achieved at V = −5 V. The gate to drain distance is 6 µm and the gate length is 0.8 µm. The fabricated results for AFP device are in relatively good agreement with the simulation results and exhibit improvement in forward blocking voltage of 375 V at V = −5 V. This is a factor of 3× improvement when compared to the best device that can be fabricated using conventional field plate (FP) for this particular process. The measured specific on-resistance for the device with the proposed AFP is 0.58 $mΩ·cm^{2}$ at V = 0 V, which compares favorably with 0.79 $mΩ·cm^{2}$ for the device with a conventional FP.
Starting Page	337
Ending Page	340
File Size	1506231
Page Count	4
File Format	PDF
ISBN	9781457715945
ISSN	19460201
e-ISBN	9781457715976
e-ISBN	9781457715969
DOI	10.1109/ISPSD.2012.6229090
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs MODFETs Gallium nitride Aluminum gallium nitride Logic gates Electric fields Electric breakdown Gate to Source capacitance GaN Power Devices AlGaN/GaN HEMTs Air-bridge Field Plate Breakdown Voltage Electric Field
Content Type	Text
Resource Type	Article

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