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Content Provider | IEEE Xplore Digital Library |
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Author | Yuncheng Song Zhiliang Xia Jinfeng Yang Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu |
Copyright Year | 2006 |
Description | Author affiliation: Inst. of Microelectron., Peking Univ., Beijing (Yuncheng Song) |
Abstract | We propose a self-consistent method to simulate charge trapping and de-trapping in charge storage layer and its interfaces of SONOS type flash memory devices. This method can be used under various applied voltages; in various structures composed of multiple material, thickness and shape of gate stack layers. It can also work with arbitrary trap density distribution in either real space or energy space. Further more, the self-consistent method has enough flexibility to accommodate detailed physical models |
Starting Page | 772 |
Ending Page | 774 |
File Size | 518439 |
Page Count | 3 |
File Format | |
ISBN | 1424401607 |
DOI | 10.1109/ICSICT.2006.306482 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2006-10-23 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Flash memory SONOS devices Electron traps Nonvolatile memory Monte Carlo methods Probability Electron emission Tunneling Microelectronics Voltage |
Content Type | Text |
Resource Type | Article |
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