NDLI: An investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide

Content Provider	IEEE Xplore Digital Library
Author	Yi-Chuen Eng Jyi-Tsong Lin Kuo-Dong Huang Tai-Yi Lee Kao-Cheng Lin
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. Eng., National Sun Yat-Sen Univ., Kaohsiung (Yi-Chuen Eng; Jyi-Tsong Lin; Kuo-Dong Huang; Tai-Yi Lee; Kao-Cheng Lin)
Abstract	This paper is submitted with an investigation concerning the effects of the Si thickness-induced variation of the electrical characteristics in the FDSOI with block oxide. We noticed that the traditional sidewall spacer process is used and processed to produce the block oxide enclosing the Si-body in our proposed structure, the undesirable ultra-short-channel effects can be significantly diminished via the suppressed charge sharing out of the source/drain to the body, as compared to the conventional UTBSOI MOSFET. Also, owing to the required thickness of the Si-body, the self-heating problem gets improved, so the reliability of these structures be upgraded and benefit a renewed interest in the single-gate FDSOI MOSFET for the future ULSI applications
Starting Page	61
Ending Page	64
File Size	1265053
Page Count	4
File Format	PDF
ISBN	1424401607
DOI	10.1109/ICSICT.2006.306077
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric variables MOSFET circuits Fabrication Ultra large scale integration Silicon on insulator technology Thermal conductivity Electrons Etching Amorphous materials Implants
Content Type	Text
Resource Type	Article

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