NDLI: Effects of V/III Ratios on the Properties of AlN Grown on Si (111) Substrate by LP-MOCVD

Content Provider	IEEE Xplore Digital Library
Author	Yongmei Zhao Guosheng Sun Xingfang Liu Jiaye Li Wanshun Zhao Lei Wang Muchang Luo Jinmin Li
Copyright Year	2006
Description	Author affiliation: Inst. of Semicond., Chinese Acad. of Sci., Beijing (Yongmei Zhao)
Abstract	The AlN thin films were deposited on Si(111) substrates by home-made low pressure metalorganic chemical vapor deposition (LP-MOCVD). At the growth temperature of 1100degC, the effects of the different V/III ratios on the surface morphology and structural characteristics of AlN films were systematically studied. The growth rate of about 150 nm/h was determined by the cross-sectional SEM. By the help of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements, the obvious effects of the specific growth conditions (different V/III ratios) on the surface morphology and crystallinity of the deposited AlN films were investigated. At the V/III ratio of 15000, the preferred (0002) orientated AlN epitaxial film with the relatively smaller RMS roughness (1.422 nm) was obtained. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical composition and the chemical bonding structure of the AlN film, indicating some Si atoms outdiffusion from the Si substrate occurred
Starting Page	911
Ending Page	913
File Size	196078
Page Count	3
File Format	PDF
ISBN	1424401607
DOI	10.1109/ICSICT.2006.306569
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Chemical analysis Surface morphology Scanning electron microscopy Atomic layer deposition Atomic measurements Atomic force microscopy Force measurement Sputtering Chemical vapor deposition
Content Type	Text
Resource Type	Article

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