NDLI: Optimization of BSIM3 I-V Model for Double Diffused Drain HV MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Ren Zheng Hu Shaojian Shi Yanling Zhu Jun Chen Shoumian Zhao Yuhang
Copyright Year	2006
Description	Author affiliation: East China Normal Univ., Shanghai (Ren Zheng)
Abstract	This paper presents a technique for modeling double diffused drain high-voltage MOSFET devices (DDD HV MOSFET). I-V measurements have been made by Agilent ICCAP. Based on the difference between DDD HV MOSFET and normal low voltage MOSFET devices (LV MOSFET), the Rd dependency of Vgs is discussed and equations of Rd and delta (the effective Vds parameter) in the BSIM3v3 model have been optimized. Three parameters are added: Prwg2 which is gate bias quadric coefficient of Rdsw and $delta_{1},$ $delta_{2}$ which are gate bias coefficients of delta. The optimization has been made on SPICE BSIM3v3 model using SPICE macro model. The contrast between I-V simulated data of optimized HV MOSFET model and the measured data has been made after parameters extraction. They fit very well
Starting Page	1349
Ending Page	1351
File Size	193598
Page Count	3
File Format	PDF
ISBN	1424401607
DOI	10.1109/ICSICT.2006.306157
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits SPICE Research and development Intrusion detection Space charge Electrical resistance measurement Low voltage Difference equations Parameter extraction Electronic design automation and methodology
Content Type	Text
Resource Type	Article

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