NDLI: A novel high-k gate dielectric HfLaO for next generation CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Ming-Fu Li Wang, W.R. Yu, H.Y. Zhu, C.X. Chin, A. Du, A.Y. Shao, J. Lu, W. Shen, X.C. Liu, P. Hung, S. Lo, P. Kwong, D.L.
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. & Comput. Eng., National Univ. of Singapore (Ming-Fu Li; Wang, W.R.)
Abstract	The physical and electrical characteristics of high-k (HK) gate dielectric HfLaO were systematically investigated. Incorporation of La in $HfO_{2}$ can raise the film crystallization temperature from 400degC to 900degC. Moreover, NMOSFETs fabricated with HfLaO gate dielectric exhibit superior electrical performances in terms of threshold voltage $(V_{th}),$ bias temperature instability (BTI), channel electron mobility and gate leakage current compared to those fabricated with $HfO_{2}$ dielectric. Particularly, the authors also report that the effective work function (EWF) of metal gate (MG) can be tuned to a wide enough range to fulfil the requirement of bulk CMOSFETs by employing HfLaO dielectric and n- and p-type metal gates respectively. These advantages are correlated to the enhanced thermal stability and reduction of oxygen vacancy density in HfLaO compared to $HfO_{2},$ making it a promising high-k gate dielectric to replace $SiO_{2}$ and SiON to meet the ITRS requirements. Finally, a possible dual metal gate CMOS integration process is proposed
Starting Page	372
Ending Page	375
File Size	1152987
Page Count	4
File Format	PDF
ISBN	1424401607
DOI	10.1109/ICSICT.2006.306255
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Hafnium compounds Hafnium oxide Temperature Electric variables High K dielectric materials High-K gate dielectrics Crystallization MOSFETs Threshold voltage
Content Type	Text
Resource Type	Article

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